Kinetic equations for a system of partly coherent high-density polaritions in semiconductors

Kinetic equations describing the behavior of a system of high-density polaritons excited in a direct-gap semiconductor by laser radiation are obtained in the Born approximation. It is noted that the presence in the system of a nonequilibrium Bose–Einstein condensate of polaritons, and also the possibility of its real decay, lead to a number of special features in its description. The equations are derived by the nonequilibrium statistical operator method formulated in terms of generating functionals.