Abstract:
Chemical and materials science aspects of formation of ruthenium-containing thin films for modern high-precision technologies by chemical vapour deposition (CVD) methods are considered. Chemical approaches to the synthesis of main precursors used in MOCVD techniques, layer growth processes as well as main physicochemical and electrical properties of ruthenium-containing thin films are analyzed. Bibliography — 120 references.
Received: 24.04.2013
Bibliographic databases:
Language: English
Original paper language: Russian
Citation:
V. Yu. Vasilev, N. B. Morozova, I. K. Igumenov, “Chemical vapour-phase deposition of ruthenium-containing thin films”, Russian Chem. Reviews, 83:8 (2014), 758–782