Abstract:
A generalised kinetic approach to the description of the dissolution of semiconductors (including the thermal oxidation of silicon and germanium) is based on a statistical thermodynamic analysis of the adsorption steps, and on an analysis of the structure of the activated complex and of the effects of solvation of the intermediate and the final products (calculated from model descriptions). 66 references.
Bibliographic databases:
Document Type:
Article
UDC:
537.311.33+541.183
Language: English
Original paper language: Russian
Citation:
S. M. Repinsky, “Kinetics and Mechanism of the Dissolution and Oxidation of Semiconductors”, Usp. Khim., 52:6 (1983), 922–935; Russian Chem. Reviews, 52:6 (1983), 524–531
Linking options:
https://www.mathnet.ru/eng/rcr3472
https://doi.org/10.1070/RC1983v052n06ABEH002860
https://www.mathnet.ru/eng/rcr/v52/i6/p922
This publication is cited in the following 2 articles:
M. D. Mikhailov, N. A. Anikina, Glass Phys Chem, 37:1 (2011), 21
S. M. Repinskii, Semiconductors, 35:9 (2001), 1006
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