Kinetics and Mechanism of the Dissolution and Oxidation of Semiconductors

A generalised kinetic approach to the description of the dissolution of semiconductors (including the thermal oxidation of silicon and germanium) is based on a statistical thermodynamic analysis of the adsorption steps, and on an analysis of the structure of the activated complex and of the effects of solvation of the intermediate and the final products (calculated from model descriptions). 66 references.