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Russian Chemical Reviews, 1978, Volume 47, Issue 3, Pages 238–246
DOI: https://doi.org/10.1070/RC1978v047n03ABEH002215
(Mi rcr3039)
 

This article is cited in 2 scientific papers (total in 2 papers)

Radiation Effects in the Chemistry of Group IVB Elements (Silicon, Germanium, Tin, and Lead)

N. V. Fomina, N. I. Sheverdina, K. A. Kocheshkov

Karpov Institute of Physical Chemistry, Moscow
Abstract: Data concerning the effect of ionising radiation on the principal reactions in organometallic synthesis involving Group IVB elements are considered: radiolysis of organometallic compounds of Group IVB elements, addition to the C=C bond, redistribution of radicals, reactions leading to the substitution of functional groups or organic substituents at the metal atom, reactions involving the organic group, and direct synthesis of organometallic compounds from the metal and alkyl halides.
The bibliography includes 104 references.
Bibliographic databases:
Document Type: Article
UDC: 542.91:547
Language: English
Original paper language: Russian


Citation: N. V. Fomina, N. I. Sheverdina, K. A. Kocheshkov, “Radiation Effects in the Chemistry of Group IVB Elements (Silicon, Germanium, Tin, and Lead)”, Usp. Khim., 47:3 (1978), 428–443; Russian Chem. Reviews, 47:3 (1978), 238–246
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  • https://doi.org/10.1070/RC1978v047n03ABEH002215
  • https://www.mathnet.ru/eng/rcr/v47/i3/p428
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