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Kvantovaya Elektronika, 1989, Volume 16, Number 12, Pages 2394–2399 (Mi qe9812)  

This article is cited in 2 scientific papers (total in 2 papers)

Lasers and amplifiers

Recombination gas-discharge lasers utilizing transitions in multiply charged O III and Xe IV ions

E. L. Latush, M. F. Sèm, G. D. Chebotarev
Full-text PDF (880 kB) Citations (2)
Abstract: An analysis was made of the conditions required to achieve high-intensity recombination pumping of levels of multiply charged ions in a longitudinal pulsed gas discharge. It was found that elastic collisions with light buffer gas atoms and ions combined with ambipolar diffusion result in fairly rapid (within 0. 1–1.0 μs) cooling of the electrons in the discharge afterglow at low (up to 1 Torr) buffer gas pressures and for small ( ~ 0.3 cm) tube diameters. Lasing was obtained for the first time by recombination pumping utilizing the λ = 375.5, 376.0, and 559.2 nm O III transitions and the λ = 335.0, 430.6, 495.4, 500.8, 515.9, 526.0, 535.3, 539.5, and 595.6 nm Xe IV transitions. This was achieved in a mixture of ~ 10 – 2 Torr O2 or Xe with He, H2, or Ne (0.1–0.3 Torr) in a tube 3-mm in diameter and 50-cm long.
Received: 19.09.1988
English version:
Soviet Journal of Quantum Electronics, 1989, Volume 19, Issue 12, Pages 1537–1540
DOI: https://doi.org/10.1070/QE1989v019n12ABEH009812
Bibliographic databases:
Document Type: Article
UDC: 621.373.826.038.823
PACS: 42.55.Lt, 52.80.Hc, 32.80.Pj, 32.80.Bx, 32.80.Rm
Language: Russian


Citation: E. L. Latush, M. F. Sèm, G. D. Chebotarev, “Recombination gas-discharge lasers utilizing transitions in multiply charged O III and Xe IV ions”, Kvantovaya Elektronika, 16:12 (1989), 2394–2399 [Sov J Quantum Electron, 19:12 (1989), 1537–1540]
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  • https://www.mathnet.ru/eng/qe/v16/i12/p2394
  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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