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This article is cited in 2 scientific papers (total in 2 papers)
Brief Communications
Electron-beam-pumped semiconductor laser operating at low acceleration voltages
O. V. Bogdankevich, N. A. Borisov, V. I. Borodulin, V. F. Pevtsov, V. I. Shveĭkin
Abstract:
An investigation was made of the threshold characteristics of a laser pumped transversely by an electron beam accelerated by voltages below 25 kV. The target was a three-layer heterostructure with a thin active region between two wide-gap layers. The lowest threshold energy of the electron beam was 10 keV at T ≈ 90 °K (the corresponding threshold value of the current density was jth = 0.45 A/cm2) and 12 keV at T ≈ 300 °K (jth ≈ 0.9A/cm2).
Received: 08.10.1980
Citation:
O. V. Bogdankevich, N. A. Borisov, V. I. Borodulin, V. F. Pevtsov, V. I. Shveĭkin, “Electron-beam-pumped semiconductor laser operating at low acceleration voltages”, Kvantovaya Elektronika, 8:5 (1981), 1128–1131 [Sov J Quantum Electron, 11:5 (1981), 675–677]
Linking options:
https://www.mathnet.ru/eng/qe7020 https://www.mathnet.ru/eng/qe/v8/i5/p1128
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Abstract page: | 143 | Full-text PDF : | 66 |
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