Electron-beam-pumped semiconductor laser operating at low acceleration voltages

An investigation was made of the threshold characteristics of a laser pumped transversely by an electron beam accelerated by voltages below 25 kV. The target was a three-layer heterostructure with a thin active region between two wide-gap layers. The lowest threshold energy of the electron beam was 10 keV at T ≈ 90 °K (the corresponding threshold value of the current density was j_th = 0.45 A/cm²) and 12 keV at T ≈ 300 °K (j_th ≈ 0.9A/cm²).