Use of a semiconductor injection laser in determination of time characteristics of fast-response photomultipliers

An analysis was made of the excitation conditions in a GaAs injection laser ensuring generation of single light pulses of 2·10^–10–10^–7 sec duration with a leading edge not longer than 2·10^–10 sec. These light signals were used to determine the pulse and transient characteristics of high-current fast-response photomultipliers with coaxial outputs (these photomultipliers were of the 18ÈLU-F and 7ÈLU-F7 type). The time resolution and delay of these photomultipliers were determined.