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Kvantovaya Elektronika, 1987, Volume 14, Number 1, Pages 204–205 (Mi qe6521)  

Brief Communications

Fast degradation defects on reflecting faces of InGaAsP/lnP lasers emitting in the 1.3 μ range

I. V. Akimova, A. E. Drakin, V. P. Duraev, P. G. Eliseev, B. I. Makhsudov, B. N. Sverdlov
Abstract: An electron-microscopic investigation was made of the end mirror faces of cw InGaAsP/lnP lasers which failed in the course of accelerated life tests (up to 1000 h at 70–100 °C). Surface defects were observed on the mirror faces and they resembled optical damage defects reported for GaAlAs lasers.
Received: 08.04.1986
English version:
Soviet Journal of Quantum Electronics, 1987, Volume 17, Issue 1, Pages 121–122
DOI: https://doi.org/10.1070/QE1987v017n01ABEH006521
Bibliographic databases:
Document Type: Article
UDC: 621.373.826.038.825.4
PACS: 42.55.Px, 42.60.Pk, 42.87.-d, 06.60.Mr
Language: Russian


Citation: I. V. Akimova, A. E. Drakin, V. P. Duraev, P. G. Eliseev, B. I. Makhsudov, B. N. Sverdlov, “Fast degradation defects on reflecting faces of InGaAsP/lnP lasers emitting in the 1.3 μ range”, Kvantovaya Elektronika, 14:1 (1987), 204–205 [Sov J Quantum Electron, 17:1 (1987), 121–122]
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  • https://www.mathnet.ru/eng/qe/v14/i1/p204
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