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Kvantovaya Elektronika, 1981, Volume 8, Number 1, Pages 185–188 (Mi qe5356)  
Brief Communications

Semiconductor laser with transitions between magnetoacoustic subbands

A. G. Aleksanyan, G. P. Boyakhchyan
Full-text PDF (549 kB)
Abstract: The threshold characteristics are calculated for a semiconductor laser whose operation depends on magnetoacoustic transitions. The temperature dependences of the threshold electron density are obtained for various values of the amplitude and frequency of ultrasound, and of the thickness of the sample.
Received: 08.04.1980
Revised: 17.06.1980
English version:
Soviet Journal of Quantum Electronics, 1981, Volume 11, Issue 1, Pages 108–109
DOI: https://doi.org/10.1070/QE1981v011n01ABEH005356
Bibliographic databases:
Document Type: Article
UDC: 621.373.826.038.825.4
PACS: 42.55.Px
Language: Russian


Citation: A. G. Aleksanyan, G. P. Boyakhchyan, “Semiconductor laser with transitions between magnetoacoustic subbands”, Kvantovaya Elektronika, 8:1 (1981), 185–188 [Sov J Quantum Electron, 11:1 (1981), 108–109]
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    		Квантовая электроника Quantum Electronics
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