Abstract:
It is shown experimentally that the use of a travelling-wave semiconductor optical amplifier (SOA) significantly improves the output characteristics of a superluminescent diode (SLD), increasing, in particular, its output power or broadening its emission band. By using SOAs based on separate-confinement double (InGa)PAs heterostructures emitting at 1300 nm and different SLDs as input radiation sources, there were obtained up to 50 mW of cw power at the output of a single-mode fibre and the emission band with the half-width up to 70 nm.
Citation:
V. V. Prokhorov, D. S. Shvakov, S. D. Yakubovich, “Broadband highly bright radiation sources based on a superluminescent diode and a semiconductor optical amplifier”, Kvantovaya Elektronika, 35:6 (2005), 504–506 [Quantum Electron., 35:6 (2005), 504–506]
Linking options:
https://www.mathnet.ru/eng/qe4096
https://www.mathnet.ru/eng/qe/v35/i6/p504
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