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Kvantovaya Elektronika, 2005, Volume 35, Number 6, Pages 504–506 (Mi qe4096)  

This article is cited in 4 scientific papers (total in 4 papers)

Lasers

Broadband highly bright radiation sources based on a superluminescent diode and a semiconductor optical amplifier

V. V. Prokhorova, D. S. Shvakova, S. D. Yakubovichb

a Superlum Diodes Ltd., Moscow
b Moscow State Institute of Radio-Engineering, Electronics and Automation (Technical University)
Full-text PDF (106 kB) Citations (4)
Abstract: It is shown experimentally that the use of a travelling-wave semiconductor optical amplifier (SOA) significantly improves the output characteristics of a superluminescent diode (SLD), increasing, in particular, its output power or broadening its emission band. By using SOAs based on separate-confinement double (InGa)PAs heterostructures emitting at 1300 nm and different SLDs as input radiation sources, there were obtained up to 50 mW of cw power at the output of a single-mode fibre and the emission band with the half-width up to 70 nm.
Received: 14.03.2005
English version:
Quantum Electronics, 2005, Volume 35, Issue 6, Pages 504–506
DOI: https://doi.org/10.1070/QE2005v035n06ABEH004096
Bibliographic databases:
Document Type: Article
PACS: 42.55.Px, 42.60.Jf
Language: Russian


Citation: V. V. Prokhorov, D. S. Shvakov, S. D. Yakubovich, “Broadband highly bright radiation sources based on a superluminescent diode and a semiconductor optical amplifier”, Kvantovaya Elektronika, 35:6 (2005), 504–506 [Quantum Electron., 35:6 (2005), 504–506]
Linking options:
  • https://www.mathnet.ru/eng/qe4096
  • https://www.mathnet.ru/eng/qe/v35/i6/p504
  • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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