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Kvantovaya Elektronika, 1971, Number 3, Pages 90–92 (Mi qe3076)  

This article is cited in 1 scientific paper (total in 1 paper)

Brief Communications

Frequency modulation of a semiconductor laser by injection current

Yu. A. Bykovskii, V. L. Velichanskii, V. A. Maslov, V. L. Smirnov
Full-text PDF (563 kB) Citations (1)
Abstract: The emission frequency of a continuous-wave GaAs laser was modulated by varying the injection current. The frequency dependence of the efficiency of the modulation (the ratio of the amplitude of the frequency oscillations to the amplitude of the current oscillations) was investigated by a new method. It was found that this efficiency decreased by a factor of 30 when the modulation frequency was increased from 5 to 200 kHz. The experimental results were in agreement with the calculation of the temperature dependence of the frequency and of the thermal conditions in the laser.
Received: 02.09.1970
English version:
Soviet Journal of Quantum Electronics, 1971, Volume 1, Issue 3, Pages 268–270
DOI: https://doi.org/10.1070/QE1971v001n03ABEH003076
Document Type: Article
UDC: 621.378.329
PACS: 42.55.Px, 42.60.By, 42.60.Fc, 42.60.Pk, 42.60.Lh
Language: Russian


Citation: Yu. A. Bykovskii, V. L. Velichanskii, V. A. Maslov, V. L. Smirnov, “Frequency modulation of a semiconductor laser by injection current”, Kvantovaya Elektronika, 3 (1971), 90–92 [Sov J Quantum Electron, 1:3 (1971), 268–270]
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  • https://www.mathnet.ru/eng/qe/y1971/i3/p90
  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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