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Kvantovaya Elektronika, 1971, Number 3, Pages 92–93 (Mi qe3077)  
This article is cited in 2 scientific papers (total in 2 papers)

Brief Communications

Faraday effect in indium antimonide at λ = 10.6 μ

A. L. Mikaélyan, E. V. Ovchinnikova, M. M. Koblova, L. B. Bezymenskaya
Full-text PDF (359 kB) Citations (2)
Abstract: The Faraday effect and the transmission of tellurium-doped indium antimonide with free-carrier densities of (1.1 – 4.0) · 1017 cm–3 were investigated at λ = 10.6 μ. The losses corresponding to rotation of the angle of polarization by 45° amounted to 14%.
Received: 21.08.1970
Revised: 03.02.1971
English version:
Soviet Journal of Quantum Electronics, 1971, Volume 1, Issue 3, Pages 271–272
DOI: https://doi.org/10.1070/QE1971v001n03ABEH003077
Document Type: Article
UDC: 535.511.082.52
PACS: 78.20.-e, 72.20.Jv, 42.55.Lt, 77.22.Ch
Language: Russian


Citation: A. L. Mikaélyan, E. V. Ovchinnikova, M. M. Koblova, L. B. Bezymenskaya, “Faraday effect in indium antimonide at λ = 10.6 μ”, Kvantovaya Elektronika, 3 (1971), 92–93 [Sov J Quantum Electron, 1:3 (1971), 271–272]
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  • https://www.mathnet.ru/eng/qe/y1971/i3/p92
    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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