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Kvantovaya Elektronika, 1971, Number 3, Pages 92–93
(Mi qe3077)
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This article is cited in 2 scientific papers (total in 2 papers)
Brief Communications
Faraday effect in indium antimonide at λ = 10.6 μ
A. L. Mikaélyan, E. V. Ovchinnikova, M. M. Koblova, L. B. Bezymenskaya
Abstract:
The Faraday effect and the transmission of tellurium-doped indium antimonide with free-carrier densities of (1.1 – 4.0) · 1017 cm–3 were investigated at λ = 10.6 μ. The losses corresponding to rotation of the angle of polarization by 45° amounted to 14%.
Received: 21.08.1970 Revised: 03.02.1971
Citation:
A. L. Mikaélyan, E. V. Ovchinnikova, M. M. Koblova, L. B. Bezymenskaya, “Faraday effect in indium antimonide at λ = 10.6 μ”, Kvantovaya Elektronika, 3 (1971), 92–93 [Sov J Quantum Electron, 1:3 (1971), 271–272]
Linking options:
https://www.mathnet.ru/eng/qe3077 https://www.mathnet.ru/eng/qe/y1971/i3/p92
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Abstract page: | 109 | Full-text PDF : | 52 |
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