Temperature dependence of the threshold current of PbSe/PbSnSe DH lasers

The temperature dependence of the gain in narrow-gap semiconductors is analyzed, as is that of the threshold current in PbSe/PbSnSe DH lasers. Several channels for current flow are taken into account: tunneling, recombination at the heterojunction, and leakage current across the heterojunction barrier. The calculated numbers are compared with experimental results. Conditions are found for room-temperature oscillation of PbSe/PbSnSe DH lasers.