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This article is cited in 15 scientific papers (total in 15 papers)
Semiconductor lasers. Physics and Technology
High-power 850–870-nm pulsed lasers based on heterostructures with narrow and wide waveguides
M. A. Ladugin, Yu. P. Koval', A. A. Marmalyuk, V. A. Petrovskii, T. A. Bagaev, A. Yu. Andreev, A. A. Padalitsa, V. A. Simakov Polyus Research and Development Institute named after M. F. Stel'makh
Abstract:
The power and spectral characteristics of pulsed laser diode arrays operating in the spectral range of 850—870 nm and based on heterostructures of two different types (with narrow and wide waveguides) are studied. It is found that the power—current characteristics of the laser arrays of both types are linear within the pump current range of 10—50 A and that the steepness of these characteristics decreases at currents exceeding 80 A. The decrease in the slope efficiency is more noticeable for laser arrays based on heterostructures with wide waveguides.
Keywords:
laser diode array, MOVPE, heterostructure, heat generation.
Received: 22.02.2013 Revised: 09.04.2013
Citation:
M. A. Ladugin, Yu. P. Koval', A. A. Marmalyuk, V. A. Petrovskii, T. A. Bagaev, A. Yu. Andreev, A. A. Padalitsa, V. A. Simakov, “High-power 850–870-nm pulsed lasers based on heterostructures with narrow and wide waveguides”, Kvantovaya Elektronika, 43:5 (2013), 407–409 [Quantum Electron., 43:5 (2013), 407–409]
Linking options:
https://www.mathnet.ru/eng/qe15156 https://www.mathnet.ru/eng/qe/v43/i5/p407
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Abstract page: | 350 | Full-text PDF : | 145 | References: | 39 | First page: | 39 |
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