Intracavity terahertz difference-frequency generation in an InGaAs-quantum-well two-frequency InGaAsP/InP laser

The scheme of a semiconductor quantum-well laser is proposed for the simultaneous generation of TE₀ and TM₀ modes with different frequencies in the near-IR region. The possibility of efficient terahertz difference-frequency generation by this laser is considered. It is shown that for the 100-μm-wide active region of the laser and for the 1-W near-IR modes, the laser power at the difference frequency in the 1 — 8-THz region can achieve ~1 μmW at room temperature.