Abstract:
The scheme of a semiconductor quantum-well laser is proposed for the simultaneous generation of TE0 and TM0 modes with different frequencies in the near-IR region. The possibility of efficient terahertz difference-frequency generation by this laser is considered. It is shown that for the 100-μm-wide active region of the laser and for the 1-W near-IR modes, the laser power at the difference frequency in the 1 — 8-THz region can achieve ~1 μmW at room temperature.
Citation:
V. Ya. Aleshkin, A. A. Dubinov, “Intracavity terahertz difference-frequency generation in an InGaAs-quantum-well two-frequency InGaAsP/InP laser”, Kvantovaya Elektronika, 39:8 (2009), 727–730 [Quantum Electron., 39:8 (2009), 727–730]
Linking options:
https://www.mathnet.ru/eng/qe14087
https://www.mathnet.ru/eng/qe/v39/i8/p727
This publication is cited in the following 4 articles:
Dorokhin V M., Zvonkov B.N., Demina P.B., Dikareva V N., Zdoroveishchev V A., Kudrin V A., Vikhrova O.V., Samartsev V I., Nekorkin S.M., Tech. Phys., 66:11 (2021), 1194–1199
M. B. Agranat, I. V. Il'ina, D. S. Sitnikov, High Temperature, 55:6 (2017), 922–934
V. Ya. Aleshkin, T. S. Babushkina, A. A. Birykov, A. A. Dubinov, B. N. Zvonkov, M. N. Kolesnikov, S. M. Nekorkin, Semiconductors, 45:5 (2011), 641