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This article is cited in 4 scientific papers (total in 4 papers)
Lasers
Intracavity terahertz difference-frequency generation in an InGaAs-quantum-well two-frequency InGaAsP/InP laser
V. Ya. Aleshkin, A. A. Dubinov Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
Abstract:
The scheme of a semiconductor quantum-well laser is proposed for the simultaneous generation of TE0 and TM0 modes with different frequencies in the near-IR region. The possibility of efficient terahertz difference-frequency generation by this laser is considered. It is shown that for the 100-μm-wide active region of the laser and for the 1-W near-IR modes, the laser power at the difference frequency in the 1 — 8-THz region can achieve ~1 μmW at room temperature.
Received: 24.02.2009
Citation:
V. Ya. Aleshkin, A. A. Dubinov, “Intracavity terahertz difference-frequency generation in an InGaAs-quantum-well two-frequency InGaAsP/InP laser”, Kvantovaya Elektronika, 39:8 (2009), 727–730 [Quantum Electron., 39:8 (2009), 727–730]
Linking options:
https://www.mathnet.ru/eng/qe14087 https://www.mathnet.ru/eng/qe/v39/i8/p727
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Abstract page: | 169 | Full-text PDF : | 124 | First page: | 1 |
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