Abstract:
This paper presents a new method of analytical calculation of the flow rate of the gas mixture and the concentration of the growth component during gas-phase epitaxy in a reaction chamber with a rotating substrate holder disk. The concentration of the growth component is analyzed in relation to a number of epitaxy process parameters.
Keywords:
epitaxy from gas phase, convective diffusion, substrate holder disk.
Citation:
E. L. Pankratov, P. B. Boldyrevskii, “Convective diffusion from gas to a rotating disk”, Prikl. Mekh. Tekh. Fiz., 57:4 (2016), 74–83; J. Appl. Mech. Tech. Phys., 57:4 (2016), 637–645
\Bibitem{PanBol16}
\by E.~L.~Pankratov, P.~B.~Boldyrevskii
\paper Convective diffusion from gas to a rotating disk
\jour Prikl. Mekh. Tekh. Fiz.
\yr 2016
\vol 57
\issue 4
\pages 74--83
\mathnet{http://mi.mathnet.ru/pmtf815}
\crossref{https://doi.org/10.15372/PMTF20160407}
\elib{https://elibrary.ru/item.asp?id=26493341}
\transl
\jour J. Appl. Mech. Tech. Phys.
\yr 2016
\vol 57
\issue 4
\pages 637--645
\crossref{https://doi.org/10.1134/S0021894416040076}
Linking options:
https://www.mathnet.ru/eng/pmtf815
https://www.mathnet.ru/eng/pmtf/v57/i4/p74
This publication is cited in the following 2 articles:
Evgeny L Pankratov, Elena A Bulaeva, “On improvement of films growth from gas with natural convection and chemical interaction”, Emerging Materials Research, 8:3 (2019), 331
P. B. Boldyrevskii, D. O. Filatov, I. A. Kazantseva, M. V. Revin, D. S. Smotrin, P. A. Yunin, “Influence of the rotation frequency of a disk substrate holder on the crystal structure characteristics of MOCVD-grown GaAs layers”, Tech. Phys., 63:2 (2018), 211–215
Citation in format AMSBIB
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