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Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 3, Page 282 (Mi phts6596)  
This article is cited in 4 scientific papers (total in 4 papers)

Semiconductor physics

TlGaN quantum-dot photodetectors

A. G. AL-Shatravia, H. Hassanb, S. M. Abdulalmuhsina, A. H. Al-Khursanb

a Physics Department, College of Science, University of Thi-Qar, Nassiriyah, Iraq
b Nassiriya Nanotechnology Research Laboratory (NNRL), College of Science, University of Thi-Qar, Nassiriyah, Iraq
Full-text PDF (27 kB) Citations (4)
Abstract: Due to the lack of work in structures containing thallium (Tl), this work is devoted to study of Ga$_8$Tl$_2$N quantum-dot photodetectors. Parameters are specified first. This structure is shown to have low absorption. Enough quantum efficiency is obtained. This detector works at 360–460 nm and peaked at 410 nm, which can be used in optical coherence tomography applications.
Keywords: quantum dot, thallium-based structures, quantum efficiency, absorption spectrum.
Received: 28.09.2020
Revised: 28.09.2020
Accepted: 03.11.2020
English version:
Semiconductors, 2021, Volume 55, Issue 3, Pages 359–362
DOI: https://doi.org/10.1134/S1063782621030039
Document Type: Article
Language: English
Citation: A. G. AL-Shatravi, H. Hassan, S. M. Abdulalmuhsin, A. H. Al-Khursan, “TlGaN quantum-dot photodetectors”, Fizika i Tekhnika Poluprovodnikov, 55:3 (2021), 282; Semiconductors, 55:3 (2021), 359–362
Citation in format AMSBIB
\Bibitem{Al-HasAbd21}
\by A.~G.~AL-Shatravi, H.~Hassan, S.~M.~Abdulalmuhsin, A.~H.~Al-Khursan
\paper TlGaN quantum-dot photodetectors
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2021
\vol 55
\issue 3
\pages 282
\mathnet{http://mi.mathnet.ru/phts6596}
\transl
\jour Semiconductors
\yr 2021
\vol 55
\issue 3
\pages 359--362
\crossref{https://doi.org/10.1134/S1063782621030039}
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    • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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