Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 3, Page 282 (Mi phts6596)  
This article is cited in 4 scientific papers (total in 4 papers)

Semiconductor physics

TlGaN quantum-dot photodetectors

A. G. AL-Shatravia, H. Hassanb, S. M. Abdulalmuhsina, A. H. Al-Khursanb

a Physics Department, College of Science, University of Thi-Qar, Nassiriyah, Iraq
b Nassiriya Nanotechnology Research Laboratory (NNRL), College of Science, University of Thi-Qar, Nassiriyah, Iraq
Full-text PDF (27 kB) Citations (4)
Abstract: Due to the lack of work in structures containing thallium (Tl), this work is devoted to study of Ga8Tl2N quantum-dot photodetectors. Parameters are specified first. This structure is shown to have low absorption. Enough quantum efficiency is obtained. This detector works at 360–460 nm and peaked at 410 nm, which can be used in optical coherence tomography applications.
Keywords: quantum dot, thallium-based structures, quantum efficiency, absorption spectrum.
Received: 28.09.2020
Revised: 28.09.2020
Accepted: 03.11.2020
English version:
Semiconductors, 2021, Volume 55, Issue 3, Pages 359–362
DOI: https://doi.org/10.1134/S1063782621030039
Document Type: Article
Language: English
Citation: A. G. AL-Shatravi, H. Hassan, S. M. Abdulalmuhsin, A. H. Al-Khursan, “TlGaN quantum-dot photodetectors”, Fizika i Tekhnika Poluprovodnikov, 55:3 (2021), 282; Semiconductors, 55:3 (2021), 359–362
Citation in format AMSBIB
\Bibitem{Al-HasAbd21}
\by A.~G.~AL-Shatravi, H.~Hassan, S.~M.~Abdulalmuhsin, A.~H.~Al-Khursan
\paper TlGaN quantum-dot photodetectors
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2021
\vol 55
\issue 3
\pages 282
\mathnet{http://mi.mathnet.ru/phts6596}
\transl
\jour Semiconductors
\yr 2021
\vol 55
\issue 3
\pages 359--362
\crossref{https://doi.org/10.1134/S1063782621030039}
Linking options:
  • https://www.mathnet.ru/eng/phts6596
  • https://www.mathnet.ru/eng/phts/v55/i3/p282
    • This publication is cited in the following 4 articles:
    1. Buraq T. Sh. Almosawi, Mohammed K. Al-Hashimi, Baqer Obaid Al-Nashy, Amin H. Al-Khursan, “B0.1In0.9P Quantum Dot Semiconductor Optical Amplifiers”, J Opt, 53:2 (2024), 1557  crossref
    2. Khamael Ibrahim, Baqer O. Al-Nashy, Faten K. Hachim, Amin Habbeb Al-Khursan, “Thallium bromide quantum dot structure”, Results in Optics, 11 (2023), 100391  crossref
    3. Baqer O. Al-Nashy, Buraq T. Sh. Al-Mosawi, Mushtaq Obaid Oleiwi, Amin H. Al-Khursan, K. Ramash Kumar, “Gain of TlBr/BrCl Quantum Dot Semiconductor Optical Amplifier”, Journal of Electrical and Computer Engineering, 2023 (2023), 1  crossref
    4. Xian-Hao Zhao, Xiao-Nan Wei, Tian-Yu Tang, Quan Xie, Li-Ke Gao, Li-Min Lu, De-Yuan Hu, Li Li, Yan-Lin Tang, “Theoretical prediction of the structural, electronic and optical properties of vacancy-ordered double perovskites Tl2TiX6 (X = Cl, Br, I)”, Journal of Solid State Chemistry, 305 (2022), 122684  crossref
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
    Statistics & downloads:
    Abstract page:56
    Full-text PDF :19
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2025