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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 1, Pages 97–102 (Mi phts6568)  

This article is cited in 3 scientific papers (total in 3 papers)

Micro- and nanocrystalline, porous, composite semiconductors

Polarized photoluminescence of nc-Si–SiOx nanostructures

E. V. Michailovska, I. Z. Indutnii, P. E. Shepeliavyi, N. V. Sopinskii

Institute of Semiconductor Physics NAS, Kiev
Full-text PDF (311 kB) Citations (3)
Abstract: The effect of photoluminescence polarization memory in nc-Si–SiOx light-emitting structures containing Si nanoparticles (nc-Si) in an oxide matrix is for the first time studied. The polarization properties of continuous and porous nanostructures passivated in HF vapors (or solutions) are studied. It is established that the polarization memory effect is manifested only after treatment of the structures in HF. The effect is also accompanied by a shift of the photoluminescence peak to shorter wavelengths and by a substantial increase in the photoluminescence intensity. It is found that, in anisotropic nc-Si–SiOx samples produced by oblique deposition in vacuum, the degree of linear photoluminescence polarization in the sample plane exhibits a noticeable orientation dependence and correlates with the orientation of SiOx nanocolumns forming the structure of the porous layer. These effects are attributed to the transformation of symmetrically shaped Si nanoparticles into asymmetric elongated nc-Si particles upon etching in HF. In continuous layers, nc-Si particles are oriented randomly, whereas in porous structures, their preferential orientation coincides with the orientation of oxide nanocolumns.
Received: 09.02.2015
Accepted: 03.04.2015
English version:
Semiconductors, 2016, Volume 50, Issue 1, Pages 97–102
DOI: https://doi.org/10.1134/S1063782616010164
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: E. V. Michailovska, I. Z. Indutnii, P. E. Shepeliavyi, N. V. Sopinskii, “Polarized photoluminescence of nc-Si–SiOx nanostructures”, Fizika i Tekhnika Poluprovodnikov, 50:1 (2016), 97–102; Semiconductors, 50:1 (2016), 97–102
Citation in format AMSBIB
\Bibitem{MicIndShe16}
\by E.~V.~Michailovska, I.~Z.~Indutnii, P.~E.~Shepeliavyi, N.~V.~Sopinskii
\paper Polarized photoluminescence of $nc$-Si--SiO$_{x}$ nanostructures
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 1
\pages 97--102
\mathnet{http://mi.mathnet.ru/phts6568}
\elib{https://elibrary.ru/item.asp?id=25668041}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 1
\pages 97--102
\crossref{https://doi.org/10.1134/S1063782616010164}
Linking options:
  • https://www.mathnet.ru/eng/phts6568
  • https://www.mathnet.ru/eng/phts/v50/i1/p97
  • This publication is cited in the following 3 articles:
    1. Katerina Michailovska, Viktor Dan'ko, Ivan Indutnyi, Petro Shepeliavyi, Mykola Sopinskyy, “Polarized luminescence of silicon nanoparticles formed in (SiOx–SiOy)n superlattice”, Appl Nanosci, 12:3 (2022), 479  crossref
    2. Katerina Michailovska, Viktor Mynko, Ivan Indutnyi, Petro Shepeliavyi, “Polarized luminescence of nc-Si–SiOx nanostructures on silicon substrates with patterned surface”, Appl Nanosci, 8:4 (2018), 785  crossref
    3. Katerina Michailovska, Ivan Indutnyi, Petro Shepeliavyi, Mykola Sopinskyy, “Polarization memory effect in the photoluminescence of nc-Si-SiOx light-emitting structures”, Nanoscale Res Lett, 11:1 (2016)  crossref
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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