Loading [MathJax]/jax/output/CommonHTML/jax.js
Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 7, Pages 880–883
DOI: https://doi.org/10.21883/FTP.2017.07.44632.18 (Mi phts6089) 		 
This article is cited in 5 scientific papers (total in 5 papers)

XV International Conference ''Thermoelectrics and Their Applications-2016 St. Petersburg'', November 15-16, 2016

Transport properties of heteroepitaxial films based on bismuth telluride in strong magnetic fields

L. N. Luk'yanova, Yu. A. Boikov, O. A. Usov, V. A. Danilov, M. P. Volkov

Ioffe Institute, St. Petersburg
Full-text PDF (118 kB) Citations (5)
DOI: https://doi.org/10.21883/FTP.2017.07.44632.18
Abstract: The temperature and magnetic-field dependences of the galvanomagnetic properties of n-Bi2Te3 heteroepitaxial films in magnetic fields to 14 T at low temperatures are studied. It is shown that steps in the magnetic-field dependences of the quantum Hall effect and the plateau in the temperature dependences of the magnetoresistance of films are caused by topological surface states of Dirac fermions.
Received: 27.12.2016
Accepted: 12.01.2017
English version:
Semiconductors, 2017, Volume 51, Issue 7, Pages 843–846
DOI: https://doi.org/10.1134/S1063782617070259
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: L. N. Luk'yanova, Yu. A. Boikov, O. A. Usov, V. A. Danilov, M. P. Volkov, “Transport properties of heteroepitaxial films based on bismuth telluride in strong magnetic fields”, Fizika i Tekhnika Poluprovodnikov, 51:7 (2017), 880–883; Semiconductors, 51:7 (2017), 843–846
Citation in format AMSBIB
\Bibitem{LukBoiUso17}
\by L.~N.~Luk'yanova, Yu.~A.~Boikov, O.~A.~Usov, V.~A.~Danilov, M.~P.~Volkov
\paper Transport properties of heteroepitaxial films based on bismuth telluride in strong magnetic fields
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 7
\pages 880--883
\mathnet{http://mi.mathnet.ru/phts6089}
\crossref{https://doi.org/10.21883/FTP.2017.07.44632.18}
\elib{https://elibrary.ru/item.asp?id=29772347}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 7
\pages 843--846
\crossref{https://doi.org/10.1134/S1063782617070259}
Linking options:
  • https://www.mathnet.ru/eng/phts6089
  • https://www.mathnet.ru/eng/phts/v51/i7/p880
    • This publication is cited in the following 5 articles:
    1. N. P. Stepanov, “Electron–Plasmon Interaction in Bi2Te3–Sb2Te3 Crystals”, J. Surf. Investig., 18:2 (2024), 419  crossref
    2. N. P. Stepanov, “Electron–plasmon interaction in Bi<sub>2</sub>Te<sub>3</sub>–Sb<sub>2</sub>Te<sub>3</sub>”, Poverhnostʹ. Rentgenovskie, sinhrotronnye i nejtronnye issledovaniâ, 2024, no. 4  crossref
    3. N. P. Stepanov, M. S. Ivanov, “Processes in the Electronic System of Solid Solutions of Bismuth and Antimony Tellurides in the Range of Observation of the Anomalous Temperature Dependence of the Hall Coefficient”, Bull. Russ. Acad. Sci. Phys., 88:9 (2024), 1402  crossref
    4. O. A. Usov, L. N. Lukyanova, M. P. Volkov, “Galvanomagnetic Properties in Anisotropic Layered Films Based on Bismuth Chalcogenides”, Semiconductors, 56:2 (2022), 134  crossref
    5. L. N. Lukyanova, O. A. Usov, M. P. Volkov, I. V. Makarenko, “Topological Thermoelectric Materials Based on Bismuth Telluride”, Nanotechnol Russia, 16:3 (2021), 282  crossref
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
    Statistics & downloads:
    Abstract page:66
    Full-text PDF :13
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2025