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This article is cited in 5 scientific papers (total in 5 papers)
XV International Conference ''Thermoelectrics and Their Applications-2016 St. Petersburg'', November 15-16, 2016
Transport properties of heteroepitaxial films based on bismuth telluride in strong magnetic fields
L. N. Luk'yanova, Yu. A. Boikov, O. A. Usov, V. A. Danilov, M. P. Volkov Ioffe Institute, St. Petersburg
Abstract:
The temperature and magnetic-field dependences of the galvanomagnetic properties of $n$-Bi$_2$Te$_3$ heteroepitaxial films in magnetic fields to 14 T at low temperatures are studied. It is shown that steps in the magnetic-field dependences of the quantum Hall effect and the plateau in the temperature dependences of the magnetoresistance of films are caused by topological surface states of Dirac fermions.
Received: 27.12.2016 Accepted: 12.01.2017
Citation:
L. N. Luk'yanova, Yu. A. Boikov, O. A. Usov, V. A. Danilov, M. P. Volkov, “Transport properties of heteroepitaxial films based on bismuth telluride in strong magnetic fields”, Fizika i Tekhnika Poluprovodnikov, 51:7 (2017), 880–883; Semiconductors, 51:7 (2017), 843–846
Linking options:
https://www.mathnet.ru/eng/phts6089 https://www.mathnet.ru/eng/phts/v51/i7/p880
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