Abstract:
The temperature and magnetic-field dependences of the galvanomagnetic properties of $n$-Bi$_2$Te$_3$ heteroepitaxial films in magnetic fields to 14 T at low temperatures are studied. It is shown that steps in the magnetic-field dependences of the quantum Hall effect and the plateau in the temperature dependences of the magnetoresistance of films are caused by topological surface states of Dirac fermions.
Citation:
L. N. Luk'yanova, Yu. A. Boikov, O. A. Usov, V. A. Danilov, M. P. Volkov, “Transport properties of heteroepitaxial films based on bismuth telluride in strong magnetic fields”, Fizika i Tekhnika Poluprovodnikov, 51:7 (2017), 880–883; Semiconductors, 51:7 (2017), 843–846