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Publications in Math-Net.Ru |
Citations |
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1991 |
| 1. |
G. M. Gusakov, T. N. Kondratova, M. S. Minazhdinov, A. I. Laryushin, “О природе точечных дефектов в GaAs, возникающих при импульсном
лазерном облученииB”, Fizika i Tekhnika Poluprovodnikov, 25:3 (1991), 369–372  |
| 2. |
D. O. Barsukov, G. M. Gusakov, A. I. Frolov, “Growth of periodic structures on the surface of germanium subjected to pulsed laser radiation”, Kvantovaya Elektronika, 18:12 (1991), 1477–1480 [Sov J Quantum Electron, 21:12 (1991), 1363–1365  ] |
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1990 |
| 3. |
G. M. Gusakov, A. I. Frolov, “LOW-TEMPERATURE DYNAMICS OF SEMICONDUCTORS REFLECTION COEFFICIENTS UNDER
NANOSECOND LASER IRRADIATION”, Zhurnal Tekhnicheskoi Fiziki, 60:9 (1990), 136–138 |
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1989 |
| 4. |
G. M. Gusakov, T. N. Kodratova, K. S. Kapskii, A. I. Laryushin, “Влияние импульсного лазерного облучения на профиль подвижности
и проводимости эпитаксиальных слоев GaAs”, Fizika i Tekhnika Poluprovodnikov, 23:10 (1989), 1864–1868 |
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1987 |
| 5. |
G. M. Gusakov, A. A. Komarnitskiĭ, “Effect of multiple pulse laser irradiation on the morphology of a germanium surface”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:3 (1987), 170–174 |
| 6. |
G. M. Gusakov, A. A. Komarnitskiĭ, “Anomalous behavior of optical silicon parameters under pulsive laser-heating”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:3 (1987), 166–170 |
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1986 |
| 7. |
G. M. Gusakov, A. A. Komarnitskiĭ, S. S. Sarkisyan, “Raman measurement of the refractive silicon index during pulsed laser annealing”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:3 (1986), 175–179 |
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1985 |
| 8. |
V. D. Verner, G. M. Gusakov, S. S. Sarkisyan, A. A. Komarnitskiĭ, “Low-frequency stability of a YAG:Nd<sup>3+</sup> laser”, Kvantovaya Elektronika, 12:7 (1985), 1548–1550 [Sov J Quantum Electron, 15:7 (1985), 1024–1026 ] |
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