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Publications in Math-Net.Ru |
Citations |
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2010 |
| 1. |
S. D. Velikanov, S. G. Garanin, A. P. Domazhirov, V. M. Efanov, M. V. Efanov, S. Yu. Kazantsev, B. E. Kodola, Yu. N. Komarov, I. G. Kononov, S. V. Podlesnykh, A. A. Sivachev, K. N. Firsov, V. V. Shchurov, P. M. Yarin, “Solid-state laser-pumped high-power electric-discharge HF laser”, Kvantovaya Elektronika, 40:5 (2010), 393–396   [Quantum Electron., 40:5 (2010), 393–396   ] |
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1990 |
| 2. |
I. V. Grekhov, V. M. Efanov, “POTENTIAL GENERATION OF STIMULATED RADIATION THROUGH SHOCK-IONIZATION
WAVES IN SEMICONDUCTORS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:17 (1990), 9–14 |
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1988 |
| 3. |
V. I. Brylevskii, I. V. Grekhov, V. M. Efanov, A. F. Kardo-Sisoev, I. G. Chashnikov, D. I. Shemetilo, “INVERSE VOLTAGE FAST REDUCTION EFFECT ON THE SYMMETRIC P+PNN+-STRUCTURE”, Zhurnal Tekhnicheskoi Fiziki, 58:11 (1988), 2244–2247 |
| 4. |
V. M. Efanov, A. F. Kardo-Sisoev, M. V. Popova, “Нестационарные токи двойной инжекции в условиях насыщения скоростей
дрейфа электронов и дырок”, Fizika i Tekhnika Poluprovodnikov, 22:10 (1988), 1747–1753 |
| 5. |
I. V. Grekhov, V. M. Efanov, “POTENTIALITY OF FAST GENERATION OF DENSE ELECTRON-HOLE LARGE-CAPACITY
PLASMA IN GALLIUM-ARSENIDE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:23 (1988), 2121–2124 |
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1987 |
| 6. |
V. M. Efanov, A. F. Kardo-Sisoev, I. A. Smirnova, “Nonstationary Processes of Electron-Hole Plasma Accumulation and Dispersal in Semiconductors in High Electric Fields”, Fizika i Tekhnika Poluprovodnikov, 21:4 (1987), 620–625 |
| 7. |
Zh. I. Alferov, I. V. Grekhov, V. M. Efanov, A. F. Kardo-Sisoev, V. I. Korol'kov, M. N. Stepanova, “Formation of high-voltage differential pressure of picosecond range on arsenide-gallium diodes”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:18 (1987), 1089–1093 |
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1986 |
| 8. |
Zh. I. Alferov, V. M. Efanov, Yu. M. Zadiranov, A. F. Kardo-Sisoev, V. I. Korol'kov, S. I. Ponomarev, A. V. Rozhkov, “Electrically controlled trielectrode high-voltage switches of the subnanosecond range based on the $Ga\,As-Al\,Ga\,As$ multilayered heterostructure”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:21 (1986), 1281–1285 |
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1985 |
| 9. |
I. V. Grekhov, V. M. Efanov, A. F. Kardo-Sisoev, I. A. Smirnova, “Semiconductor powerful subnanosecond commutators with more time retentivity under conducting conditions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:15 (1985), 901–904 |
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1983 |
| 10. |
I. V. Grekhov, V. M. Efanov, A. F. Kardo-Sisoev, S. V. Shenderei, “Формирование высоковольтных наносекундных перепадов напряжения на
полупроводниковых диодах с дрейфовым механизмом восстановления напряжения”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:7 (1983), 435–439 |
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