Semicoductor material science.

1. G. Bokuchava, G. Murguliya, V. Kashiya, “Issledovanie vliyaniya reaktornogo oblucheniya na termoelektricheskie svoistva silnolegirovannogo $n$- i $p$- Si0,7Ge0,3”, Voprosy atomnoi nauki i tekhniki (VANT), 3 (2005), 68–72
2. Sh. Darsavelidze, G. V. Bokuchava, B. M. Shirokov i dr., “Fiziko-mekhanicheskie kharakteristiki monokristallicheskogo kremniya”, Trudy XVII Mezhdunarodnoi konferentsii po fizike radiatsionnykh yavlenii i radiatsionnomu materialovedeniyu (Ukraina, 4–9 sentyabrya 2006 g.), 263–264
3. G. Bokuchava, I. Kurashvili, E. Sanaia, G. Darsavelidze, “Physico-Mechanical Properties of Si0.85Ge0.15:GaP Alloy”, Bulletin of Georgian National Academy of Sciences, 175:2 (2007), 53–56
4. G. Darsavelidze, I. Kurashvili, G. Bokuchava, “Amplitude Dependence of Internal Friction and Shear Modulus of Tin-Doped Monocrystaline Silicon”, Bulletin of Georgian National Academy of Sciences, 3:2 (2009), 100–102

• Sukhumi Institute of Physics and Technology