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Publications in Math-Net.Ru |
Citations |
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1989 |
| 1. |
D. Z. Garbuzov, A. V. Vasil'ev, E. V. Zhuravkevich, V. P. Chalyi, A. L. Termartirosyan, A. V. Ovchinnikov, V. B. Khalfin, “EFFECT OF INNER FLOWS IN ALLOY DURING THE EPITAXIAL LAYER GROWTH, ON THE
MOVING SUBLAYER”, Zhurnal Tekhnicheskoi Fiziki, 59:1 (1989), 92–97  |
| 2. |
I. V. Antonova, A. V. Vasil'ev, V. I. Panov, S. S. Shaimeev, “Параметры распределения дивакансий в нейтронно-облученном кремнии”, Fizika i Tekhnika Poluprovodnikov, 23:8 (1989), 1519–1520 |
| 3. |
I. V. Antonova, A. V. Vasil'ev, V. I. Panov, S. S. Shaimeev, “Особенности отжига дивакансии в кремнии, содержащем разупорядоченные
области”, Fizika i Tekhnika Poluprovodnikov, 23:6 (1989), 1076–1079 |
| 4. |
I. V. Antonova, A. V. Vasil'ev, V. I. Panov, S. S. Shaimeev, “Поведение примеси золота в кремнии при радиационно-термических
воздействиях”, Fizika i Tekhnika Poluprovodnikov, 23:2 (1989), 253–256 |
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1988 |
| 5. |
A. V. Vasil'ev, V. V. Mikhnovich, S. A. Smagulova, “Механизм отжига разупорядоченных областей в кремнии”, Fizika i Tekhnika Poluprovodnikov, 22:6 (1988), 1137–1139 |
| 6. |
I. V. Antonova, A. V. Vasil'ev, V. I. Panov, S. SyuShaimeev, “Применение емкостной методики DLTS к исследованию полупроводников
с неоднородным распределением примесей (дефектов)”, Fizika i Tekhnika Poluprovodnikov, 22:6 (1988), 998–1003 |
| 7. |
A. I. Ashin, I. V. Antonova, A. V. Vasil'ev, V. I. Panov, S. S. Shaimeev, “Влияние интенсивности облучения быстрыми нейтронами
на процессы дефектообразования в кремнии”, Fizika i Tekhnika Poluprovodnikov, 22:4 (1988), 692–696 |
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1987 |
| 8. |
A. V. Chudinov, V. P. Chalyi, A. E. Svetlokuzev, A. V. Vasil'ev, A. L. Termartirosyan, D. Z. Garbuzov, “Photoluminescent Studies of InGaAsP/InP Heterostructures with Active Region of $40\div 1000$ ÅThickness”, Fizika i Tekhnika Poluprovodnikov, 21:7 (1987), 1217–1222 |
| 9. |
I. V. Antonova, A. V. Vasil'ev, V. I. Panov, S. A. Smagulova, L. S. Smirnov, S. S. Shaimeev, “Capacity-Spectroscopy Study of Magnesium-Doped $n$-Type Silicon”, Fizika i Tekhnika Poluprovodnikov, 21:4 (1987), 684–687 |
| 10. |
A. V. Vasil'ev, V. I. Panov, S. A. Smagulova, S. S. Shaimeev, “Dependence of Rates of Defect-Complex Injection in $n$-Type Silicon on Electron-Irradiation Temperature”, Fizika i Tekhnika Poluprovodnikov, 21:3 (1987), 573–575 |
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1986 |
| 11. |
A. I. Baranov, A. V. Vasil'ev, L. S. Smirnov, “Change of Energy-Level System in the Gap as a Factor Controlling Rate of Reactions between Charged Delects in Semiconductors”, Fizika i Tekhnika Poluprovodnikov, 20:6 (1986), 1132–1134 |
| 12. |
A. V. Vasil'ev, L. S. Smirnov, S. S. Shaimeev, “On the Divacancy Levels in the Gap of Silicon”, Fizika i Tekhnika Poluprovodnikov, 20:4 (1986), 737–739 |
| 13. |
A. V. Vasil'ev, S. A. Smagulova, L. S. Smirnov, “Annealing of Divacancies in Silicon Irradiated by Fast Neutrons”, Fizika i Tekhnika Poluprovodnikov, 20:3 (1986), 561–564 |
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1985 |
| 14. |
A. V. Vasil'ev, M. I. Izteleuov, S. A. Smagulova, L. S. Smirnov, “On the
Parameters of Regions of Disorder
in Silicon”, Fizika i Tekhnika Poluprovodnikov, 19:11 (1985), 2073–2074 |
| 15. |
A. V. Vasil'ev, S. A. Smagulova, S. S. Shaimeev, “Accumulation of Point Defects in Silicon with Regions of Disorder Transformed by
Annealing”, Fizika i Tekhnika Poluprovodnikov, 19:5 (1985), 952–955 |
| 16. |
A. V. Vasil'ev, V. Yu. Nekrasov, A. A. Polyakov, V. N. Trukhin, I. D. Yaroshetskiĭ, “Frequency-shift and spectrum broadening of picosecond light-pulses during its propagation in semiconductors”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:1 (1985), 34–38 |
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1984 |
| 17. |
A. I. Baranov, A. V. Vasil'ev, N. I. Komolova, S. A. Smagulova, L. S. Smirnov, S. S. Shaimeev, “Количественные оценки параметров образования основных радиационных
дефектов в кремнии”, Fizika i Tekhnika Poluprovodnikov, 18:12 (1984), 2177–2181 |
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1983 |
| 18. |
S. N. Val'kovskii, A. V. Vasil'ev, E. I. Logacheva, A. I. Ryskin, “Nonuniform broadening of an admixture center zero-phonon line at different conditions of plastic deformations of $\mathrm{CaF}_{2}:\mathrm{Eu}$ crystals”, Fizika Tverdogo Tela, 25:10 (1983), 3012–3018 |
| 19. |
A. I. Baranov, A. V. Vasil'ev, N. I. Komolova, S. A. Smagulova, “О количественных оценках параметров радиационного дефектообразования
в кремнии $n$-типа”, Fizika i Tekhnika Poluprovodnikov, 17:9 (1983), 1663–1666 |
| 20. |
A. V. Vasil'ev, I. A. Kopshik, S. A. Smagulova, M. A. Tsvaigert, S. S. Shaimeev, “Исследование методом DLTS отжига кремния $n$-типа, облученного
нейтронами”, Fizika i Tekhnika Poluprovodnikov, 17:6 (1983), 1155–1157 |
| 21. |
A. V. Vasil'ev, S. A. Smagulova, S. S. Shaimeev, “К вопросу о методике обработки спектров DLTS”, Fizika i Tekhnika Poluprovodnikov, 17:1 (1983), 162–164 |
| 22. |
A. V. Vasil'ev, S. A. Smagulova, “Параметры трансформированных отжигом разупорядоченных областей
в кремнии $n$-типа”, Fizika i Tekhnika Poluprovodnikov, 17:1 (1983), 30–34 |
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1975 |
| 23. |
A. V. Vasil'ev, “Description of Stationary Probabilities of Some Markov Interaction Systems”, Probl. Peredachi Inf., 11:4 (1975), 109–112  ; Problems Inform. Transmission, 11:4 (1975), 344–346 |
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1973 |
| 24. |
A. V. Vasil'ev, A. V. Koganov, “A Model of Optimal Behavior in an Unknown Medium”, Probl. Peredachi Inf., 9:4 (1973), 58–65  ; Problems Inform. Transmission, 9:4 (1973), 314–320 |
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1971 |
| 25. |
A. V. Vasil'ev, “A Sorting Problem”, Probl. Peredachi Inf., 7:3 (1971), 109–111 ; Problems Inform. Transmission, 7:3 (1971), 278–280 |
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1968 |
| 26. |
A. V. Vasil'ev, “Control of the Numbers of a Cell Population Consisting of Cells of Two Types”, Probl. Peredachi Inf., 4:4 (1968), 84–85 ; Problems Inform. Transmission, 4:4 (1968), 72–73 |
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1997 |
| 27. |
A. V. Vasil'ev, “Mathematics through the Recent 50 Years”, Math. Ed., 1997, no. 3, 75–91 |
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