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Publications in Math-Net.Ru |
Citations |
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1991 |
1. |
A. F. Burenkov, F. F. Komarov, S. A. Fedotov, “FLUCTUATIONS OF ION CHARGE STATES - POSSIBLE REASON FOR INCREASE OF
SHOOT DISPERSION UNDER HIGH-ENERGY IONIC IMPLANTATION”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:5 (1991), 69–72 |
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1990 |
2. |
A. F. Burenkov, A. I. Kirkovski, V. A. Tsurko, “Numerical simulation submicron doped regions in semiconductor structures manufacturing”, Matem. Mod., 2:10 (1990), 13–25 |
3. |
A. F. Burenkov, F. F. Komarov, S. A. Fedotov, “MODEL OF BORON ION CHANNELING UNDER THE HIGH-ENERGY ION ALLOYING OF
SILICON-CRYSTALS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:23 (1990), 4–8 |
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1988 |
4. |
A. F. Burenkov, F. F. Komarov, “HIGH-ENERGY ION-IMPLANTATION”, Zhurnal Tekhnicheskoi Fiziki, 58:3 (1988), 559–566 |
5. |
A. F. Burenkov, Y. I. Dudchik, F. F. Komarov, “RADIATION UNDER CHANNELING ELECTRONS WITH 16.9, 30.5, 54.5-MU-U ENERGY
IN DIAMOND”, Zhurnal Tekhnicheskoi Fiziki, 58:1 (1988), 195–197 |
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1986 |
6. |
V. M. Anishchik, A. F. Burenkov, A. F. Komarov, “EFFECTS ACCOMPANYING THE CHANNELING OF ULTRARELATIVISTIC ELECTRONS IN
CRYSTALS”, Zhurnal Tekhnicheskoi Fiziki, 56:11 (1986), 2214–2220 |
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1985 |
7. |
A. F. Burenkov, F. F. Komarov, Yu. I. Dudchik, “BROADENING THE SPONTANEOUS RADIATION LINES DURING ELECTRON PLANAR
CHANNELING”, Zhurnal Tekhnicheskoi Fiziki, 55:11 (1985), 2184–2190 |
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