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Publications in Math-Net.Ru |
Citations |
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2019 |
1. |
A. G. Banshchikov, Yu. Yu. Illarionov, M. I. Vexler, S. Wachter, N. S. Sokolov, “Trends in reverse-current change in tunnel MIS diodes with calcium fluoride on Si(111) upon the formation of an extra oxide layer”, Fizika i Tekhnika Poluprovodnikov, 53:6 (2019), 844–849 ; Semiconductors, 53:6 (2019), 833–837 |
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2018 |
2. |
Yu. Yu. Illarionov, A. G. Banshchikov, N. S. Sokolov, S. Wachter, M. I. Vexler, “Nonmonotonic change in the tunnel conductivity of an MIS structure with a two-layer insulator with an increase in its thickness (by the example of the metal/SiO$_{2}$/CaF$_{2}$/Si system)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018), 150–157 ; Tech. Phys. Lett., 44:12 (2018), 1188–1191 |
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2017 |
3. |
M. I. Vexler, Yu. Yu. Illarionov, I. V. Grekhov, “Quantum-well charge and voltage distribution in a metal–insulator–semiconductor structure upon resonant electron Tunneling”, Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 467–471 ; Semiconductors, 51:4 (2017), 444–448 |
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2016 |
4. |
M. I. Vexler, G. G. Kareva, Yu. Yu. Illarionov, I. V. Grekhov, “Resonant electron tunneling and related charging phenomena in metal–oxide–$p^+$-Si nanostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:21 (2016), 62–69 ; Tech. Phys. Lett., 42:11 (2016), 1090–1093 |
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