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Publications in Math-Net.Ru |
Citations |
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2019 |
| 1. |
E. V. Demidov, V. M. Grabov, V. A. Komarov, A. N. Krushelnitckii, A. V. Suslov, M. V. Suslov, “Specific features of the quantum-size effect in transport phenomena in bismuth-thin films on mica substrates”, Fizika i Tekhnika Poluprovodnikov, 53:6 (2019), 736–740   ; Semiconductors, 53:6 (2019), 727–731 |
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| 2. |
A. V. Suslov, V. M. Grabov, V. A. Komarov, E. V. Demidov, S. V. Senkevich, M. V. Suslov, “The band-structure parameters of Bi$_{1-x}$Sb$_{x}$ (0 $\le x\le$ 0.15) thin films on substrates with different thermal-expansion coefficients”, Fizika i Tekhnika Poluprovodnikov, 53:5 (2019), 616–619 ; Semiconductors, 53:5 (2019), 611–614 |
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| 3. |
V. A. Komarov, V. M. Grabov, A. V. Suslov, N. S. Kablukova, M. V. Suslov, “The Hall and Seebeck effects in bismuth thin films on mica substrates in the temperature range of 77–300 K”, Fizika i Tekhnika Poluprovodnikov, 53:5 (2019), 597–603 ; Semiconductors, 53:5 (2019), 593–598 |
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| 4. |
M. V. Suslov, V. M. Grabov, V. A. Komarov, E. V. Demidov, S. V. Senkevich, A. V. Suslov, “The thermoelectric power of Bi$_{1-x}$Sb$_{x}$ (0 $\le x\le$ 0.15) on mica and polyimide substrates in the temperature range of 77–300 K”, Fizika i Tekhnika Poluprovodnikov, 53:5 (2019), 593–596 ; Semiconductors, 53:5 (2019), 589–592 |
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2018 |
| 5. |
V. M. Grabov, V. A. Komarov, E. V. Demidov, A. V. Suslov, M. V. Suslov, “Galvanomagnetic properties of Bi$_{95}$Sb$_{5}$ thin films on substrates with different thermal expansions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:11 (2018), 71–79 ; Tech. Phys. Lett., 44:6 (2018), 487–490 |
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2017 |
| 6. |
M. V. Suslov, V. A. Komarov, A. V. Suslov, “Thermoelectric power of Bi$_{92}$Sb$_{8}$ and Bi$_{85}$Sb$_{15}$ thin films”, Fizika i Tekhnika Poluprovodnikov, 51:7 (2017), 900–903 ; Semiconductors, 51:7 (2017), 862–865 |
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| 7. |
V. A. Komarov, A. V. Suslov, M. V. Suslov, “Galvanomagnetic properties of Bi$_{85}$Sb$_{15}$ thin films on different substrates”, Fizika i Tekhnika Poluprovodnikov, 51:6 (2017), 736–739 ; Semiconductors, 51:6 (2017), 702–705 |
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