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Publications in Math-Net.Ru |
Citations |
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2021 |
1. |
F. F. Komarov, S. B. Lastovsky, I. A. Romanov, I. N. Parkhomenko, L. A. Vlasukova, G. D. Ivlev, Y. Berencen, A. A. Tsivako, N. S. Koval'chuk, E. Wendler, “Te-hyperdoped silicon layers for visible-to-infrared photodiodes”, Zhurnal Tekhnicheskoi Fiziki, 91:12 (2021), 2026–2037 |
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2016 |
2. |
S. B. Lastovsky, V. P. Markevich, A. S. Yakushevich, L. I. Murin, V. P. Krylov, “Radiation-induced bistable centers with deep levels in silicon $n^{+}$–$p$ structures”, Fizika i Tekhnika Poluprovodnikov, 50:6 (2016), 767–771 ; Semiconductors, 50:6 (2016), 751–755 |
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Organisations |
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