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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
M. F. Panov, M. V. Pavlova, “Determination of thickness in silicon carbide structures by frequency analysis of the reflection spectrum”, Zhurnal Tekhnicheskoi Fiziki, 91:5 (2021), 827–831   ; Tech. Phys., 66:6 (2021), 779–783  |
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2020 |
| 2. |
D. D. Avrov, A. N. Gorlyak, A. O. Lebedev, V. V. Luchinin, A. V. Markov, A. V. Osipov, M. F. Panov, S. A. Kukushkin, “Comparative ellipsometric analysis of silicon carbide polytypes 4$H$, 15$R$, and 6$H$ produced by a modified Lely method in the same growth process”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:19 (2020), 28–31 ; Tech. Phys. Lett., 46:10 (2020), 968–971 |
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| 3. |
A. V. Osipov, A. S. Grashchenko, A. N. Gorlyak, A. O. Lebedev, V. V. Luchinin, A. V. Markov, M. F. Panov, S. A. Kukushkin, “Investigation of the hardness and Young's modulus in thin near-surface layers of silicon carbide from the Si- and C-faces by nanoindentation”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:15 (2020), 36–38 ; Tech. Phys. Lett., 46:8 (2020), 763–766 |
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2019 |
| 4. |
A. V. Markov, M. F. Panov, V. P. Rastegaev, E. N. Sevostyanov, V. V. Trushlyakova, “Nondestructive control of the surface, layers, and charge carrier concentration on SiC substrates and structures”, Zhurnal Tekhnicheskoi Fiziki, 89:12 (2019), 1869–1874 ; Tech. Phys., 64:12 (2019), 1774–1779 |
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2017 |
| 5. |
V. V. Luchinin, M. F. Panov, A. A. Romanov, “Planarization of a surface of nanoporous silica–titania composition by atomic-molecular chemical assembly”, Zhurnal Tekhnicheskoi Fiziki, 87:5 (2017), 736–740 ; Tech. Phys., 62:5 (2017), 755–759 |
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