|
|
|
Publications in Math-Net.Ru |
Citations |
|
2021 |
| 1. |
T. A. Shobolova, A. S. Mokeev, S. D. Rudakov, S. V. Obolensky, E. L. Shobolov, “Silicon metal–oxide–semiconductor transistor with a dependent pocket contact and two-layer polysilicon gate”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 916–921   ; Semiconductors, 55:12 (2021), 885–890 |
|
2020 |
| 2. |
A. A. Shiryaev, V. M. Vorotyntsev, E. L. Shobolov, “Prediction of the magnitude of the trapped charge in the buried oxide of silicon-on-insulator structures using the Poole–Frenkel effect”, Fizika i Tekhnika Poluprovodnikov, 54:5 (2020), 441–445 ; Semiconductors, 54:5 (2020), 518–522 |
|
2018 |
| 3. |
A. A. Shiryaev, V. M. Vorotyntsev, E. L. Shobolov, “Poole–Frenkel effect and the opportunity of its application for the prediction of radiation charge accumulation in thermal silicon dioxide”, Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 990–994 ; Semiconductors, 52:9 (2018), 1114–1117 |
2
|
|
| Organisations |
|
|
Contact us: