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Publications in Math-Net.Ru |
Citations |
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2021 |
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P. V. Seredin, K. A. Barkov, D. L. Goloshchapov, A. S. Len'shin, Yu. Yu. Khudyakov, I. N. Arsent'ev, A. A. Lebedev, Sh. Sh. Sharofidinov, A. M. Mizerov, I. A. Kasatkin, T. Prutskij, “Effect of pretreatment of the silicon substrate on the properties of GaN films grown by chloride–hydride vapor-phase epitaxy”, Fizika i Tekhnika Poluprovodnikov, 55:8 (2021), 704–710   ; Semiconductors, 55:12 (2021), 995–1001 |
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2018 |
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P. V. Seredin, D. L. Goloshchapov, T. Prutskij, Yu. A. Ippolitov, “A simultaneous analysis of microregions of carious dentin by the methods of laser-induced fluorescence and Raman spectromicroscopy”, Optics and Spectroscopy, 125:5 (2018), 708–715 ; Optics and Spectroscopy, 125:5 (2018), 803–809 |
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2017 |
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P. V. Seredin, D. L. Goloshchapov, A. S. Len'shin, A. N. Lukin, Yu. Yu. Khudyakov, I. N. Arsent'ev, T. Prutskij, “Experimental studies of the effects of atomic ordering in epitaxial Ga$_{x}$In$_{1-x}$P on their optical properties”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1160–1167 ; Semiconductors, 51:9 (2017), 1111–1118 |
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| 4. |
P. V. Seredin, A. S. Len'shin, Yu. Yu. Khudyakov, I. N. Arsent'ev, N. A. Kalyuzhnyy, S. A. Mintairov, D. N. Nikolaev, T. Prutskij, “Experimental studies of the effects of atomic ordering in epitaxial Ga$_{x}$In$_{1-x}$P alloys on their structural and morphological properties”, Fizika i Tekhnika Poluprovodnikov, 51:8 (2017), 1131–1137 ; Semiconductors, 51:8 (2017), 1087–1092 |
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P. V. Seredin, A. S. Len'shin, I. N. Arsent'ev, A. V. Zhabotinsky, D. N. Nikolaev, I. S. Tarasov, V. V. Shamakhov, Tatiana Prutskij, Harald Leiste, Monika Rinke, “Epitaxial Al$_{x}$Ga$_{1-x}$As : Mg alloys with different conductivity types”, Fizika i Tekhnika Poluprovodnikov, 51:1 (2017), 124–132 ; Semiconductors, 51:1 (2017), 122–130 |
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2016 |
| 6. |
P. V. Seredin, A. V. Fedyukin, I. N. Arsent'ev, L. S. Vavilova, I. S. Tarasov, Tatiana Prutskij, Harald Leiste, Monika Rinke, “Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 869–876 ; Semiconductors, 50:7 (2016), 853–859 |
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