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Publications in Math-Net.Ru |
Citations |
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2020 |
1. |
V. V. Privezentsev, A. P. Sergeev, V. S. Kulikauskas, D. A. Kiselev, A. Yu. Trifonov, A. N. Tereshchenko, “Structure, content and properties of Zn and O ion hot implanted silicon”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1376–1382 ; Semiconductors, 54:12 (2020), 1650–1656 |
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2019 |
2. |
V. V. Privezentsev, V. S. Kulikauskas, V. A. Skuratov, O. S. Zilova, A. A. Burmistrov, M. Yu. Presniakov, A. V. Goryachev, “Structure and properties of Zn-implanted Si near-surface layer modification depending on irradiation fluence of $^{132}$Xe$^{26+}$ ions with energy of 167 MeV”, Fizika i Tekhnika Poluprovodnikov, 53:3 (2019), 332–339 ; Semiconductors, 53:3 (2019), 313–320 |
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2015 |
3. |
E. Z. Khamdolhov, Z. M. Khamdokhov, A. Z. Khamdokhov, R. Sh. Teshev, Zm. Kh. Kalazhokov, Kh. Kh. Kalazhokov, V. S. Kulikauskas, A. A. Eriskin, “Properties of chromium-nickel alloy films
after exposure to carbon ion beam”, News of the Kabardin-Balkar scientific center of RAS, 2015, no. 5, 18–23 |
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Organisations |
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