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Publications in Math-Net.Ru |
Citations |
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2019 |
| 1. |
Z. A. Atamuratova, A. Yusupov, B. O. Halikberdiev, A. E. Atamuratov, “Anomalous behavior of lateral $C$–$V$ characteristic of an MNOS transistor with an embedded local charge in the nitride layer”, Zhurnal Tekhnicheskoi Fiziki, 89:7 (2019), 1067–1070   ; Tech. Phys., 64:7 (2019), 1006–1009 |
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2017 |
| 2. |
A. E. Atamuratov, M. Khalilloev, A. Abdikarimov, Z. A. Atamuratova, M. Kittler, R. Granzner, F. Schwierz, “Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate”, Nanosystems: Physics, Chemistry, Mathematics, 8:1 (2017), 75–78  |
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A. E. Atamuratov, A. Abdikarimov, M. Khalilloev, Z. A. Atamuratova, R. Rahmanov, A. Garcia-Loureiro, A. Yusupov, “Simulation of DIBL effect in 25 nm SOIFinFET with the different body shapes”, Nanosystems: Physics, Chemistry, Mathematics, 8:1 (2017), 71–74 |
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2015 |
| 4. |
A. E. Atamuratov, U. A. Aminov, Z. A. Atamuratova, M. Halillaev, A. Abdikarimov, H. R. Matyakubov, “The lateral capacitance of nanometer MNOSFET with a single charge trapped in oxide layeror at SiO$_2$ – Si$_3$N$_4$ interfaceat”, Nanosystems: Physics, Chemistry, Mathematics, 6:6 (2015), 837–842 |
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