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Publications in Math-Net.Ru |
Citations |
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2019 |
| 1. |
L. B. Karlina, A. S. Vlasov, M. Z. Shvarts, I. P. Soshnikov, I. P. Smirnova, F. E. Komissarenko, A. V. Ankudinov, “Ga(In)AsP lateral nanostructures as the optical component of GaAs-based photovoltaic converters”, Fizika i Tekhnika Poluprovodnikov, 53:12 (2019), 1714–1717   ; Semiconductors, 53:12 (2019), 1705–1708 |
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2018 |
| 2. |
L. B. Karlina, A. S. Vlasov, I. P. Soshnikov, I. P. Smirnova, B. Ya. Ber, A. B. Smirnov, “Nanostructure growth in the Ga(In)AsP–GaAs system under quasi-equilibrium conditions”, Fizika i Tekhnika Poluprovodnikov, 52:10 (2018), 1244–1249 ; Semiconductors, 52:10 (2018), 1363–1368 |
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| 3. |
M. E. Boiko, M. D. Sharkov, L. B. Karlina, A. M. Boiko, S. G. Konnikov, “X-ray study of the superstructure in heavily doped porous indium phosphide”, Fizika i Tekhnika Poluprovodnikov, 52:1 (2018), 89–92 ; Semiconductors, 52:1 (2018), 84–87 |
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2017 |
| 4. |
L. B. Karlina, A. S. Vlasov, B. Ya. Ber, D. Yu. Kazantsev, N. Kh. Timoshina, M. M. Kulagina, A. B. Smirnov, “Formation of a $p$-type emitter with the involvement of surfactants in GaAs photoelectric converters”, Fizika i Tekhnika Poluprovodnikov, 51:5 (2017), 699–703 ; Semiconductors, 51:5 (2017), 667–671 |
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| 5. |
A. S. Vlasov, L. B. Karlina, F. E. Komissarenko, A. V. Ankudinov, “Modification of the surface of GaAs and observation of surface enhanced Raman scattering after the diffusion of indium”, Fizika i Tekhnika Poluprovodnikov, 51:5 (2017), 611–614 ; Semiconductors, 51:5 (2017), 582–585 |
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1985 |
| 6. |
V. M. Andreev, A. T. Gorelenok, V. G. Gruzdov, V. G. Danl'chenko, N. D. Il'inskaya, V. I. Korol'kov, N. M. Saradzhishvili, L. M. Fedorov, N. M. Shmidt, M. S. Bogbanovich, N. Z. Djingarev, L. B. Karlina, V. V. Mamutin, I. A. Mokina, “INVESTIGATION OF PIN-PHOTODIODES BASED ON INGAASP/INP”, Zhurnal Tekhnicheskoi Fiziki, 55:8 (1985), 1566–1569 |
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