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Publications in Math-Net.Ru |
Citations |
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2017 |
| 1. |
G. P. Gaidar, P. I. Baransky, “Tensoresistance of $n$-Ge with different crystallographic orientations in the presence of a classically high magnetic field and without it”, Fizika i Tekhnika Poluprovodnikov, 51:7 (2017), 975–980   ; Semiconductors, 51:7 (2017), 936–941 |
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2016 |
| 2. |
G. P. Gaidar, P. I. Baransky, “Specific features of the electrophysical parameters of NTD Si treated under different conditions of heat treatment”, Fizika i Tekhnika Poluprovodnikov, 50:6 (2016), 751–756 ; Semiconductors, 50:6 (2016), 735–740 |
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1986 |
| 3. |
G. P. Gaidar, A. A. Girii, V. N. Ermakov, V. I. Shakhovtsov, “Effect of Thermal Annealing and $\gamma$-Irradiation on Resistivity Variation of $n$-Òóðå Germanium in a Magnetic Field”, Fizika i Tekhnika Poluprovodnikov, 20:11 (1986), 2109–2111 |
| 4. |
G. P. Gaidar, V. V. Savyak, Yu. V. Simonenko, “Concentration Dependence of the Anisotropy Parameter for Drag Thermal EMF in $n$-Type Germanium”, Fizika i Tekhnika Poluprovodnikov, 20:6 (1986), 1137–1139 |
| 5. |
G. P. Gaidar, V. A. Giriy, V. N. Ermakov, V. I. Shakhovtsov, “Determination of $\Theta_{u}$ Deformation-Potential Shift Constant in Transmutationally Doped Silicon Crystals”, Fizika i Tekhnika Poluprovodnikov, 20:6 (1986), 1107–1109 |
| 6. |
G. P. Gaidar, N. N. Dmitrenko, L. V. Dubar, P. M. Kurilo, A. A. Pavlenko, Yu. S. Stryuk, V. V. Tokarevskii, “Possibility of Silicon Transmutational Doping by Proton Irradiation”, Fizika i Tekhnika Poluprovodnikov, 20:5 (1986), 960–962 |
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