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Publications in Math-Net.Ru |
Citations |
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1991 |
| 1. |
S. Yu. Karpov, Yu. V. Koval'chuk, V. E. Myachin, Yu. V. Pogorel'skii, M. Yu. Silova, I. A. Sokolov, M. I. Etinberg, “Phase transformations of amorphous binary semiconductor under pulsed laser irradiation”, Fizika Tverdogo Tela, 33:1 (1991), 99–103  |
| 2. |
S. Yu. Karpov, Yu. V. Koval'chuk, G. Delakruz, V. E. Myachin, Yu. V. Pogorel'skii, “CONDITIONS OF GAAS(100) GALLIUM-STABILIZED SURFACE DURING MOLECULAR-BEAM
EPITAXY”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:24 (1991), 94–98 |
| 3. |
S. Yu. Karpov, Yu. V. Koval'chuk, V. E. Myachin, G. Delakruz, A. Y. Ostrovskii, Yu. V. Pogorel'skii, I. Y. Rusanovich, I. A. Sokolov, N. N. Faleev, G. A. Fokin, M. I. Etinberg, “STUDY OF CRYSTAL QUALITY OF ALXGA1-XAS SOLID-SOLUTIONS IN RELATION TO
SURFACE RECONSTRUCTION IN THE COURSE OF EPITAXIAL-GROWTH FROM
MOLECULAR-BEAMS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:7 (1991), 42–44 |
| 4. |
Yu. V. Koval'chuk, V. E. Myachin, A. Y. Ostrovskii, I. Y. Rusanovich, I. A. Sokolov, G. A. Fokin, V. P. Chalyi, M. I. Etinberg, M. L. Aleksandrov, A. A. Maiorov, S. S. Romanov, M. V. Stepanov, “STUDY OF SEMICONDUCTING ALGAAS-GAAS HETEROLASER OBTAINED BY THE
MOLECULAR-BEAM EPITAXY TECHNIQUE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:4 (1991), 6–10 |
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1990 |
| 5. |
S. Yu. Karpov, Yu. V. Koval'chuk, V. E. Myachin, Yu. V. Pogorel'skii, “POTENTIAL MECHANISM OF COLD NUCLEAR SYNTHESIS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:5 (1990), 91–94 |
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1989 |
| 6. |
S. Yu. Karpov, Yu. V. Koval'chuk, V. E. Myachin, Yu. V. Pogorel'skii, M. Y. Silova, I. A. Sokolov, M. I. Etinberg, “DYNAMICS OF FUSION AND CRYSTALLIZATION OF THIN AMORPHOUS IMPLANTED
SILICON LAYERS UNDER NANOSECOND LASER-PULSES”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:17 (1989), 13–17 |
| 7. |
S. Yu. Karpov, Yu. V. Koval'chuk, V. E. Myachin, A. Y. Ostrovskii, Yu. V. Pogorel'skii, I. Y. Rusanovich, I. A. Sokolov, G. A. Fokin, M. I. Etinberg, “LASER PURIFICATION OF SUBLAYERS FOR MOLECULAR-BEAM EPITAXY OF
GALLIUM-ARSENIDE - DIFFRACTION STUDY OF FAST ELECTRONS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:1 (1989), 67–69 |
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1986 |
| 8. |
S. Yu. Karpov, Yu. V. Koval'chuk, Yu. V. Pogorel'skii, “Melting of Semiconductors by Pulsed Laser Radiation (Review)”, Fizika i Tekhnika Poluprovodnikov, 20:11 (1986), 1945–1969 |
| 9. |
E. N. Arutunov, A. N. Vasil'ev, S. Yu. Karpov, Yu. V. Koval'chuk, V. E. Myachin, I. A. Sokolov, “Reduction of luminescent properties of implanted indium-phosphide induced by pulse laser-emission”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:20 (1986), 1217–1222 |
| 10. |
M. Yu. Aver'yanova, S. Yu. Karpov, Yu. V. Koval'chuk, V. E. Myachin, Yu. V. Pogorel'skii, V. Z. Pyataev, I. A. Sokolov, “Dynamics of melting of crystal indium-phosphide under nanosecond laser pulsations”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:18 (1986), 1119–1122 |
| 11. |
A. N. Vasil'ev, S. Yu. Karpov, Yu. V. Koval'chuk, V. E. Myachin, Yu. P. Pogorel'skii, I. A. Sokolov, “Anomalous behavior of optical characteristics of indium-phosphide fusion, obtained by the nanosecond laser-pulse”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:18 (1986), 1115–1119 |
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1985 |
| 12. |
E. N. Arutunov, L. V. Belyakov, A. N. Vasil'ev, D. N. Goryachev, Yu. V. Koval'chuk, V. E. Myachin, I. A. Sokolov, O. M. Sreseli, “INVESTIGATION OF GAAS FUSION PECULIARITIES UNDER 2-LONG-WAVE LASER
ANNEALING”, Zhurnal Tekhnicheskoi Fiziki, 55:11 (1985), 2144–2148 |
| 13. |
Yu. V. Koval'chuk, V. I. Kuchinskii, V. E. Myachin, E. L. Portnoĭ, V. B. Smirnitskiĭ, I. A. Sokolov, M. G. Vasil'ev, “INJECTION INGAASP/INP HETEROLASER WITH DISTRIBUTED FEEDBACK OBTAINED BY
INTERFERENCE LASER ANNEALING”, Zhurnal Tekhnicheskoi Fiziki, 55:10 (1985), 2034–2036 |
| 14. |
E. N. Arutunov, S. Yu. Karpov, Yu. V. Koval'chuk, V. E. Myachin, Yu. V. Pogorel'skii, V. B. Smirnitskiĭ, I. A. Sokolov, “The effect of nanosecond laser-pulses on the melting of graphite and diamonds”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:15 (1985), 921–924 |
| 15. |
Zh. I. Alferov, E. N. Arutunov, A. N. Vasil'ev, S. Yu. Karpov, Yu. V. Koval'chuk, V. E. Myachin, Yu. V. Pogorel'skii, I. A. Sokolov, “The effect of nanosecond laser-pulses on indium-phosphide”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:15 (1985), 916–920 |
| 16. |
M. Yu. Aver'yanova, Yu. V. Koval'chuk, Yu. V. Pogorel'skii, O. V. Smol'skii, “Dynamics of reflection coefficients of crystal $Si$ and $Ga\,As$ induced by picosecond laser-pulses”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:12 (1985), 761–765 |
| 17. |
E. V. Kalinina, Yu. V. Koval'chuk, G. V. Prishepa, O. V. Smol'skii, “Ultrashort laser-pulse effect on electrophysical properties of silicon-carbide”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:11 (1985), 669–671 |
| 18. |
E. N. Arutunov, A. N. Vasil'ev, S. Yu. Karpov, Yu. V. Koval'chuk, V. E. Myachin, I. A. Sokolov, “Photoluminescence of ion-implanted $Ga\,As$ after the nanosecond laser effect”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:6 (1985), 368–371 |
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1984 |
| 19. |
Yu. V. Koval'chuk, V. I. Kuchinskii, V. E. Myachin, I. A. Sokolov, B. I. Skopina, “DUAL WAVELENGTH LASER ANNEALING OF SEMICONDUCTORS”, Zhurnal Tekhnicheskoi Fiziki, 54:7 (1984), 1408–1410 |
| 20. |
Kh. P. Alum, Yu. V. Koval'chuk, G. V. Ostrovskaya, “NONLINEAR INTERFEROMETRY”, Zhurnal Tekhnicheskoi Fiziki, 54:5 (1984), 896–904 |
| 21. |
B. G. Zakharov, M. V. Koval'chuk, Yu. V. Koval'chuk, A. S. Semiletov, O. V. Smol'skii, E. A. Sozontov, “STANDING X-RAY WAVE TECHNIQUE IN THE INVESTIGATION OF THE
GALLIUM-ARSENIDE LASER AMORPHISM”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:22 (1984), 1402–1405 |
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1983 |
| 22. |
V. N. Abakumov, Z. I. Alferov, Yu. V. Koval'chuk, E. L. Portnoĭ, “К вопросу о механизмах лазерного отжига полупроводников”, Fizika i Tekhnika Poluprovodnikov, 17:12 (1983), 2224–2228 |
| 23. |
Z. I. Alferov, V. N. Abakumov, Yu. V. Koval'chuk, G. V. Ostrovskaya, E. L. Portnoĭ, V. B. Smirnitskiĭ, I. A. Sokolov, “Интерференционный лазерный отжиг полупроводников”, Fizika i Tekhnika Poluprovodnikov, 17:2 (1983), 235–241 |
| 24. |
Z. I. Alferov, Yu. V. Koval'chuk, Yu. V. Pogorel'skii, O. V. Smol'skii, I. A. Sokolov, “Новый фазовый переход в SiC и GaAs под действием пикосекундных
лазерных импульсов”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:22 (1983), 1373–1376 |
| 25. |
E. N. Arutunov, Yu. V. Koval'chuk, Yu. V. Pogorel'skii, E. L. Portnoĭ, O. V. Smol'skii, “О возможностях метода фотолюминесценции в исследовании лазерной
аморфизации арсенида галлия”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:21 (1983), 1298–1301 |
| 26. |
S. Yu. Karpov, Yu. V. Koval'chuk, V. I. Kuchinskii, A. S. Lazutka, N. I. Maiorova, V. A. Mishurnii, E. L. Portnoĭ, V. B. Smirnitskiĭ, “Полупроводниковый лазер (${\lambda=1.55}$ мкм) с распределенной
обратной связью в первом порядке, полученной импульсным лазерным отжигом”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:21 (1983), 1294–1297 |
| 27. |
Z. I. Alferov, Yu. V. Koval'chuk, O. V. Smol'skii, I. A. Sokolov, “Аморфизация монокристаллического арсенида галлия под действием
пикосекундных световых импульсов”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:15 (1983), 897–900 |
| 28. |
Yu. V. Koval'chuk, E. L. Portnoĭ, B. I. Skopina, V. B. Smirnitskiĭ, O. V. Smol'skii, I. A. Sokolov, “Эпитаксиальная кристаллизация напыленных слоев кремния на подложках
GaP в условиях интерференционного лазерного отжига”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:14 (1983), 850–853 |
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