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Publications in Math-Net.Ru |
Citations |
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1992 |
1. |
M. M. Sobolev, A. V. Gittsovich, M. I. Papentsev, I. V. Kochnev, B. S. Yavich, “Механизм деградации (GaAs/AlGaAs)-лазера с квантовой ямой”, Fizika i Tekhnika Poluprovodnikov, 26:10 (1992), 1760–1767 |
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1991 |
2. |
D. A. Vinokurov, V. M. Lantratov, M. A. Sinicin, V. P. Ulin, N. N. Faleev, O. M. Fedorova, Ya. L. Shaiovich, B. S. Yavich, “Свойства и особенности кристаллизации эпитаксиальных слоев GaAs,
выращенных на подложках Si(100) методом двухстадийного осаждения в МОС
гидридном процессе”, Fizika i Tekhnika Poluprovodnikov, 25:6 (1991), 1022–1029 |
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1990 |
3. |
V. B. Afanasev, S. A. Gurevich, A. L. Zakgeim, Y. A. Lifshits, V. M. Marahonov, V. P. Khvostikov, I. E. Chebunina, B. S. Yavich, “INJECTION LASER-FIELD-EFFECT TRANSISTOR FAST-RESPONSE OPTOELECTRON
INTEGRAL DIAGRAM BASED ON ALGAAS/GAAS HETEROSTRUCTURE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:14 (1990), 70–74 |
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1989 |
4. |
A. I. Zhmakin, O. V. Kovalenkov, I. A. Kuzmin, Yu. N. Makarov, A. A. Fursenko, B. S. Yavich, “MATHEMATICAL-MODELING OF NONSTATIONARY MASS-TRANSFER PROCESSES IN
GAS-EPITAXIAL REACTOR VOLUME UNDER GROWING THE STRUCTURES BY THE
MOS-HYDRIDE TECHNIQUE”, Zhurnal Tekhnicheskoi Fiziki, 59:4 (1989), 149–153 |
5. |
I. A. Kuzmin, A. G. Mashevskii, D. R. Stroganov, O. M. Fedorova, B. S. Yavich, “Получение МОС гидридным методом при пониженном давлении
и фотолюминесцентные исследования GaAs/AlGaAs квантово-размерных структур”, Fizika i Tekhnika Poluprovodnikov, 23:8 (1989), 1420–1425 |
6. |
A. I. Zhmakin, L. А. Kadinskiy, I. A. Kuzmin, Yu. N. Makarov, E. A. Subashieva, B. S. Yavich, “EXPERIMENTAL AND NUMERICAL STUDY OF THE GROWTH OF GAAS EPITAXIAL LAYERS
AND ALGAAS SOLID-SOLUTIONS IN HORIZONTAL REACTOR AT LOW-PRESSURE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:15 (1989), 76–79 |
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1988 |
7. |
Z. I. Alferov, D. Z. Garbuzov, S. N. Zhigulin, I. A. Kuzmin, B. B. Orlov, M. A. Sinicin, N. A. Strugov, V. E. Tokranov, B. S. Yavich, “Квантово-размерные лазерные AlGaAs/GaAs-гетероструктуры, полученные
МОС гидридным методом. Квантовый выход люминесценции и пороги генерации”, Fizika i Tekhnika Poluprovodnikov, 22:12 (1988), 2111–2117 |
8. |
A. G. Mashevskii, M. A. Sinicin, D. R. Stroganov, O. M. Fedorova, B. S. Yavich, “FLUCTUATIONS OF A WIDTH OF QUANTUM WELLS AND LOW-TEMPERATURE
PHOTOLUMINESCENCE OF GAAS/ALGAAS QUANTUM-DIMENSIONAL STRUCTURES,
OBTAINED BY THE MOS-HYDRIDE METHOD”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:13 (1988), 1217–1220 |
9. |
O. V. Kovalenkov, A. G. Mashevskii, M. A. Sinicin, O. M. Fedorova, B. S. Yavich, “STUDY OF GAAS-ALGAAS QUANTUM-DIMENSIONAL STRUCTURES, OBTAINED BY THE
MOS-HYDRIDE METHOD”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:3 (1988), 222–226 |
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1987 |
10. |
N. D. Il'inskaya, S. A. Nikishin, M. A. Sinicin, D. V. Sinyavskii, L. P. Sorokina, B. S. Yavich, “CURRENT CONTROL BY CROSS-SECTIONS OF THE THICKNESS AND CURRENT
DEOXIDATION OF LAYERS OF ALGAAS CULTIVATED IN GROOVES”, Zhurnal Tekhnicheskoi Fiziki, 57:4 (1987), 778–782 |
11. |
S. G. Konnikov, O. V. Kovalenkov, K. Yu. Pogrebickii, M. A. Sinicin, N. N. Faleev, L. I. Flaks, B. S. Yavich, “Roentgen-Diffractional and Roentgen-Photoelectronic Measurements of the Parameters of Periodic GaAs–AlGaAs Structures
Produced by MOC Hydride Method”, Fizika i Tekhnika Poluprovodnikov, 21:10 (1987), 1745–1749 |
12. |
S. G. Konnikov, A. G. Mashevskii, M. A. Sinicin, M. M. Sobolev, B. S. Yavich, “Mechanism of Photocurrent Amplification in GaAs–AlGaAs Structures”, Fizika i Tekhnika Poluprovodnikov, 21:7 (1987), 1327–1329 |
13. |
Z. I. Alferov, V. I. Korol'kov, A. A. Pulatov, N. Rakhimov, T. S. Tabarov, B. S. Yavich, “Electric and Photoelectric Properties of $n^{+}{-}n^{0}{-}n^{+}$ Structures Based on
GaAs with Metal Grid in the $n^0$ Range”, Fizika i Tekhnika Poluprovodnikov, 21:6 (1987), 981–983 |
14. |
A. G. Mashevskii, M. A. Sinicin, O. M. Fedorova, B. S. Yavich, “Effect of Doping Level on Electrophysical Properties of Al$_{0.3}$Ga$_{0.7}$As : Si Solid
Solution”, Fizika i Tekhnika Poluprovodnikov, 21:4 (1987), 754–756 |
15. |
S. N. Aleksandrov, M. G. Ivanov, M. I. Nemenov, B. S. Rivkin, M. A. Sinicin, B. S. Yavich, “$N$-Type Current–Voltage Characteristic under Electroabsorption in a Double Heterostructure”, Fizika i Tekhnika Poluprovodnikov, 21:4 (1987), 703–706 |
16. |
Z. I. Alferov, O. A. Mezrin, M. A. Sinicin, S. I. Troshkov, B. S. Yavich, “Mechanism of the $S$-Type Current-Voltage Characteristic in a Multilayer Isotype GaAs$-$AlGaAs Heterostructure”, Fizika i Tekhnika Poluprovodnikov, 21:3 (1987), 494–499 |
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1986 |
17. |
B. Ya. Ber, L. А. Kadinskiy, M. A. Sinicin, V. S. Yuferev, B. S. Yavich, “ANALYSIS OF NONSTATIONARY PHENOMENA IN THE REACTOR VOLUME DURING THE
AL-GA-AS STRUCTURE GROWING PROCESS WITH SHARP MOC HETEROTRANSITIONS BY
THE HYDRIDE METHOD”, Zhurnal Tekhnicheskoi Fiziki, 56:2 (1986), 361–366 |
18. |
Zh. I. Alferov, S. A. Gurevich, R. V. Markova, V. M. Marahonov, S. A. Nikishin, E. L. Portnoĭ, M. A. Sinicin, D. V. Sinyavskii, F. N. Timofeev, A. E. Fedorovich, B. S. Yavich, “Continuous single-mode injection $Ga\,Al\,As$ heterolasers, obtained by gasophase and liquid-phase epitaxial hybrid technology”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:10 (1986), 577–582 |
19. |
A. I. Zhmakin, I. P. Ipatova, Yu. N. Makarov, M. A. Sinicin, A. A. Fursenko, B. S. Yavich, “Investigation of factors, determining the thickness homogeneity of gallium-arsenide epitaxial layers in the $Ga(CH_{3})_{3}-As\,H_{3}-H_{2}$ system”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:8 (1986), 506–509 |
20. |
Zh. I. Alferov, V. I. Korol'kov, N. R. Rakhimov, T. S. Tabarov, B. S. Yavich, “Arsenide-gallium vertical field transistor with the hidden lock”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:3 (1986), 183–186 |
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1985 |
21. |
M. S. Bogdanovich, L. A. Volkov, V. G. Danl'chenko, V. I. Korol'kov, N. R. Rakhimov, T. S. Tabarov, B. S. Yavich, “Study of GaAs-Based Vertical Field Controlled
Phototransistors. Mechanism of Amplification and Kinetics of
Photocurrent”, Fizika i Tekhnika Poluprovodnikov, 19:10 (1985), 1731–1735 |
22. |
L. A. Volkov, V. I. Korol'kov, A. A. Pulatov, N. Rakhimov, T. S. Tabarov, B. S. Yavich, “Vertical photo-resistance based on $n^0-Ga\,As$”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:13 (1985), 800–803 |
23. |
A. G. Mashevskii, M. A. Sinicin, O. M. Fedorova, B. S. Yavich, “Investigation of multi-layered $Ga\,As-Al\,Ga\,As$ structures on inclined cross-sections, made by the chemical etching”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:1 (1985), 21–24 |
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1984 |
24. |
R. S. Vartanyan, A. G. Mashevskii, M. A. Sinicin, V. P. Ulin, B. S. Yavich, A. A. Yakovenko, “Электрофизические характеристики метастабильных твердых растворов
(Ge$_{2}$)$_{x}$(GaAs)$_{1-x}$ и влияние на них термообработки”, Fizika i Tekhnika Poluprovodnikov, 18:8 (1984), 1438–1445 |
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1983 |
25. |
I. Ya. Karlik, D. N. Mirlin, I. I. Mokan, L. P. Nikitin, V. F. Sapega, B. S. Yavich, “Intensities of photoluminescence spectra and lifetime of optical phonon emission in $\mathrm{GaAs}$ crystals and $\mathrm{GaAs}$—$\mathrm{GaAlAs}$ heterostructures”, Fizika Tverdogo Tela, 25:1 (1983), 104–109 |
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