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Nanosystems: Physics, Chemistry, Mathematics, 2020, Volume 11, Issue 1, Pages 110–116
DOI: https://doi.org/10.17586/2220-8054-2020-11-1-110-116 (Mi nano504) 		 
CHEMISTRY AND MATERIAL SCIENCE

Modification of nanoscale thermal oxide films formed on indium phosphide under the influence of tin dioxide

I. Ya. Mittova, V. F. Kostryukov, N. A. Ilyasova, B. V. Sladkopevtsev, A. A. Samsonov

Voronezh State University, Universitetskaya pl., Voronezh, 394018, Russia
Full-text PDF (1061 kB)
DOI: https://doi.org/10.17586/2220-8054-2020-11-1-110-116
Abstract: The kinetic parameters and the limiting stage of the defining process were established by studying the thermal oxidation of SnO$_2$/InP heterostructures (thickness of SnO$_2$ layer $\sim$ 50 nm). It was established that SnO$_2$ does not have a chemical stimulating effect on the film growth rate; however, it is effective as a modifier of their structure and properties. SnO$_2$ provides the formation of nanoscale films with semiconductor properties.
Keywords: indium phosphide, nanoscale films, thermal oxidation, tin dioxide.
Funding agency Grant number
Russian Foundation for Basic Research 18-03-00354_a
This research was supported by the Russian Foundation for Basic Research, grant No. 18-03-00354a.
Received: 08.11.2019
Revised: 16.01.2020
Bibliographic databases:
Document Type: Article
Language: English
Citation: I. Ya. Mittova, V. F. Kostryukov, N. A. Ilyasova, B. V. Sladkopevtsev, A. A. Samsonov, “Modification of nanoscale thermal oxide films formed on indium phosphide under the influence of tin dioxide”, Nanosystems: Physics, Chemistry, Mathematics, 11:1 (2020), 110–116
Citation in format AMSBIB
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\by I.~Ya.~Mittova, V.~F.~Kostryukov, N.~A.~Ilyasova, B.~V.~Sladkopevtsev, A.~A.~Samsonov
\paper Modification of nanoscale thermal oxide films formed on indium phosphide under the influence of tin dioxide
\jour Nanosystems: Physics, Chemistry, Mathematics
\yr 2020
\vol 11
\issue 1
\pages 110--116
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\crossref{https://doi.org/10.17586/2220-8054-2020-11-1-110-116}
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