|
CHEMISTRY AND MATERIAL SCIENCE
Modification of nanoscale thermal oxide films formed on indium phosphide under the influence of tin dioxide
I. Ya. Mittova, V. F. Kostryukov, N. A. Ilyasova, B. V. Sladkopevtsev, A. A. Samsonov Voronezh State University, Universitetskaya pl., Voronezh, 394018, Russia
Abstract:
The kinetic parameters and the limiting stage of the defining process were established by studying the thermal oxidation of SnO2/InP heterostructures (thickness of SnO2 layer ∼ 50 nm). It was established that SnO2 does not have a chemical stimulating effect on the film growth rate; however, it is effective as a modifier of their structure and properties. SnO2 provides the formation of nanoscale films with semiconductor properties.
Keywords:
indium phosphide, nanoscale films, thermal oxidation, tin dioxide.
Received: 08.11.2019 Revised: 16.01.2020
Citation:
I. Ya. Mittova, V. F. Kostryukov, N. A. Ilyasova, B. V. Sladkopevtsev, A. A. Samsonov, “Modification of nanoscale thermal oxide films formed on indium phosphide under the influence of tin dioxide”, Nanosystems: Physics, Chemistry, Mathematics, 11:1 (2020), 110–116
Linking options:
https://www.mathnet.ru/eng/nano504 https://www.mathnet.ru/eng/nano/v11/i1/p110
|
Statistics & downloads: |
Abstract page: | 155 | Full-text PDF : | 73 |
|