|
OPTICS AND NUCLEAR PHYSICS
Two-dimensional excitons in multiple GaN/AlN monolayer quantum wells
E. A. Evropeitsev, Yu. M. Serov, D. V. Nechaev, V. N. Jmerik, T. V. Shubina, A. A. Toropov Ioffe Institute, St. Petersburg, 194021 Russia
Abstract:
The decay kinetics of low-temperature exciton photoluminescence in a heterostructure with multiple GaN/AlN monolayer quantum wells, which is prepared by molecular beam epitaxy, is studied. Measured radiation decay curves are theoretically simulated within a three-level model. The relaxation of dipole-allowed “bright” excitons spatially confined in GaN monolayers is determined as exciton relaxation with a characteristic time of $\sim$ 3 ps, which is accompanied by spin flip and by transformation to dipole-forbidden “dark” excitons whose levels lie by $\sim$ 60 meV below in energy. It has been shown that exciton states at temperatures above 50 K are two-dimensional.
Received: 17.03.2021 Revised: 17.03.2021 Accepted: 17.03.2021
Citation:
E. A. Evropeitsev, Yu. M. Serov, D. V. Nechaev, V. N. Jmerik, T. V. Shubina, A. A. Toropov, “Two-dimensional excitons in multiple GaN/AlN monolayer quantum wells”, Pis'ma v Zh. Èksper. Teoret. Fiz., 113:8 (2021), 507–513; JETP Letters, 113:8 (2021), 504–509
Linking options:
https://www.mathnet.ru/eng/jetpl6405 https://www.mathnet.ru/eng/jetpl/v113/i8/p507
|
|