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This article is cited in 2 scientific papers (total in 2 papers)
CONDENSED MATTER
A new type of charge-density-wave pinning in orthorhombic TaS$_3$ crystals with quenching defects
V. E. Minakova, A. M. Nikitina, S. V. Zaitsev-Zotov Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences, Moscow, Russia
Abstract:
Diminishing in the concentration of quenching defects during thermocycling of orthorhombic TaS$_3$ samples in the temperature range below the Peierls transition temperature $T<T_{\mathrm{P}}$ is observed. It makes it possible to study the character of pinning of the charge density wave by these defects. A number of fundamental differences from pinning by ordinary local pinning centers—impurities and point defects—have been found. We conclude that quenching defects are extended (non-local) objects (presumably, dislocations) that can diffuse from the crystal during low-temperature thermocycling due to their strong interaction with the charge density wave, which is intrinsic for Peierls conductors. The presence of these defects leads to a previously unknown non-local type of the charge-density-wave pinning that acts on $T_{\mathrm{P}}$ and the threshold field for the onset of charge-density-wave sliding, $E_{\mathrm{T}}$, differently in comparison with the local pinning centers.
Received: 17.05.2019 Revised: 17.05.2019 Accepted: 17.05.2019
Citation:
V. E. Minakova, A. M. Nikitina, S. V. Zaitsev-Zotov, “A new type of charge-density-wave pinning in orthorhombic TaS$_3$ crystals with quenching defects”, Pis'ma v Zh. Èksper. Teoret. Fiz., 110:1 (2019), 56–61; JETP Letters, 110:1 (2019), 62–67
Linking options:
https://www.mathnet.ru/eng/jetpl5945 https://www.mathnet.ru/eng/jetpl/v110/i1/p56
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