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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2019, Volume 110, Issue 1, Pages 62–67
DOI: https://doi.org/10.1134/S0370274X19130101
(Mi jetpl5946)
 

This article is cited in 2 scientific papers (total in 2 papers)

CONDENSED MATTER

AC and DC conductivities in an $n$-GaAs/AlAs heterostructure with a wide quantum well in the integer quantum Hall effect regime

A. A. Dmitrievab, I. L. Drichkoa, I. Yu. Smirnova, A. K. Bakarovc, A. A. Bykovdc

a Ioffe Institute, Russian Academy of Sciences, St. Petersburg, Russia
b ITMO University, St. Petersburg, Russia
c Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
d Novosibirsk State University, Novosibirsk, Russia
Full-text PDF (366 kB) Citations (2)
References:
Abstract: The direct-current (dc) $\sigma_{xx}^{dc}$ and alternating-current (ac) $\sigma^{ac}_{xx}=\sigma_1-i \sigma_2$ conductivities of a wide (46 nm) GaAs quantum well with the bilayer electron density distribution are measured. It is found that the magnetic field dependence of $\sigma_{xx}$ exhibits three sets of oscillations related to the transitions between Landau levels in symmetric and antisymmetric subbands and with the transitions occurring owing to the Zeeman splitting of these subbands. The analysis of the frequency dependence of the ac conductivity and the $\sigma_1/\sigma_2$ ratio demonstrates that the conductivity at the minima of oscillations is determined by the hopping mechanism.
Received: 21.05.2019
Revised: 21.05.2019
English version:
Journal of Experimental and Theoretical Physics Letters, 2019, Volume 110, Issue 1, Pages 68–73
DOI: https://doi.org/10.1134/S0021364019130095
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. A. Dmitriev, I. L. Drichko, I. Yu. Smirnov, A. K. Bakarov, A. A. Bykov, “AC and DC conductivities in an $n$-GaAs/AlAs heterostructure with a wide quantum well in the integer quantum Hall effect regime”, Pis'ma v Zh. Èksper. Teoret. Fiz., 110:1 (2019), 62–67; JETP Letters, 110:1 (2019), 68–73
Citation in format AMSBIB
\Bibitem{DmiDriSmi19}
\by A.~A.~Dmitriev, I.~L.~Drichko, I.~Yu.~Smirnov, A.~K.~Bakarov, A.~A.~Bykov
\paper AC and DC conductivities in an $n$-GaAs/AlAs heterostructure with a wide quantum well in the integer quantum Hall effect regime
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2019
\vol 110
\issue 1
\pages 62--67
\mathnet{http://mi.mathnet.ru/jetpl5946}
\crossref{https://doi.org/10.1134/S0370274X19130101}
\elib{https://elibrary.ru/item.asp?id=38591191}
\transl
\jour JETP Letters
\yr 2019
\vol 110
\issue 1
\pages 68--73
\crossref{https://doi.org/10.1134/S0021364019130095}
\isi{https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=Publons&SrcAuth=Publons_CEL&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=000483806100010}
\scopus{https://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-85071854533}
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  • This publication is cited in the following 2 articles:
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