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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2019, Volume 109, Issue 12, Pages 815–820
DOI: https://doi.org/10.1134/S0370274X19120026
(Mi jetpl5929)
 

This article is cited in 6 scientific papers (total in 6 papers)

CONDENSED MATTER

Spatially localized photoelectric effect in ambipolar organic field-effect phototransistors

V. A. Trukhanovab

a Institute of Spectroscopy, Russian Academy of Sciences, Troitsk, Moscow, Russia
b Faculty of Physics and International Laser Center, Moscow State University, Moscow, Russia
Full-text PDF (674 kB) Citations (6)
References:
Abstract: A numerical simulation has demonstrated that the conversion of incident radiation into the photocurrent in ambipolar phototransistors based on organic semiconductors at certain parameters of the materials and structure is not uniform over the entire channel length. Such a conversion occurs efficiently in a narrow region and the spatial position of this photosensitive region along the $x$ coordinate directed from the source to the drain is controlled by the gate voltage $V_{\mathrm{G}}$. Such a region exists because the electric field strength is high in it and strongly affects the efficiency of the separation of photogenerated charges in organic semiconductors. The dependences of the spatial position of the photosensitive region on the gate voltage $V_{\mathrm{G}}$ have been determined. The dependences of the ratio of the photocurrent to the dark current on the gate voltage $V_{\mathrm{G}}$ have been calculated for various spatial distribution profiles of the incident radiation intensity (step, rectangular, and Gaussian). It has been shown that these dependences after the transformation of the gate voltage scale $V_{\mathrm{G}}$ to the $x$ scale reproduce with a high accuracy the incident radiation profiles.
Funding agency Grant number
Russian Science Foundation 18-79-00341
Received: 10.04.2019
Revised: 24.04.2019
Accepted: 30.04.2019
English version:
Journal of Experimental and Theoretical Physics Letters, 2019, Volume 109, Issue 12, Pages 776–780
DOI: https://doi.org/10.1134/S0021364019120105
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. A. Trukhanov, “Spatially localized photoelectric effect in ambipolar organic field-effect phototransistors”, Pis'ma v Zh. Èksper. Teoret. Fiz., 109:12 (2019), 815–820; JETP Letters, 109:12 (2019), 776–780
Citation in format AMSBIB
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\paper Spatially localized photoelectric effect in ambipolar organic field-effect phototransistors
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  • This publication is cited in the following 6 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Письма в Журнал экспериментальной и теоретической физики Pis'ma v Zhurnal Иksperimental'noi i Teoreticheskoi Fiziki
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