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This article is cited in 2 scientific papers (total in 2 papers)
CONDENSED MATTER
Stimulated terahertz emission in a system of excitons in photoexcited silicon
A. O. Zakhar'in, A. V. Andrianov, A. G. Petrov Ioffe Institute, Russian Academy of Sciences, St. Petersburg, Russia
Abstract:
Stimulated terahertz emission owing to population inversion between exciton states in silicon crystals at intense interband photoexcitation is detected. The terahertz gain spectrum exhibits 13.7- and 15.5-meV lines, the gains of which reach 0.5 and 1 cm$^{-1}$, respectively. The 13.7-meV line is due to the population inversion between highly excited states and the ground state of free excitons. The 15.5-meV line can be associated with the population inversion between the two-exciton and biexciton states. The terahertz gain values make it possible to expect the possibility of creating a new type of a terahertz laser on transitions between free excitons in silicon under interband photoexcitation.
Received: 26.04.2019 Revised: 26.04.2019 Accepted: 07.05.2019
Citation:
A. O. Zakhar'in, A. V. Andrianov, A. G. Petrov, “Stimulated terahertz emission in a system of excitons in photoexcited silicon”, Pis'ma v Zh. Èksper. Teoret. Fiz., 109:12 (2019), 821–825; JETP Letters, 109:12 (2019), 781–785
Linking options:
https://www.mathnet.ru/eng/jetpl5930 https://www.mathnet.ru/eng/jetpl/v109/i12/p821
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Abstract page: | 119 | Full-text PDF : | 6 | References: | 19 | First page: | 9 |
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