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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2009, Volume 90, Issue 8, Pages 634–638
(Mi jetpl571)
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This article is cited in 1 scientific paper (total in 1 paper)
CONDENSED MATTER
Topological bound states
A. A. Gorbatsevicha, M. N. Zhuravlevb a Saint Petersburg Physics and Technology Centre for Research and Education
b Moscow State Institute of Electronic Technology (Technical University)
Abstract:
In the tight binding approximation, it has been shown that a peculiar type of electronic states localized near the topology change point exists in branching molecules and quantum conductors. Bound states of this type exist both below and above the allowed band, i.e., for both electrons and holes; this property fundamentally differentiates these states from the bound states formed in the minimum of the potential energy. The damping decrement of the wavefunction is independent of the band parameters and is an invariant determined by the characteristic of topology. The tunnel interaction between the topological bound states significantly determines the change in the electronic spectrum of the molecular systems in configuration transitions.
Received: 17.09.2009
Citation:
A. A. Gorbatsevich, M. N. Zhuravlev, “Topological bound states”, Pis'ma v Zh. Èksper. Teoret. Fiz., 90:8 (2009), 634–638; JETP Letters, 90:8 (2009), 582–586
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https://www.mathnet.ru/eng/jetpl571 https://www.mathnet.ru/eng/jetpl/v90/i8/p634
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Abstract page: | 297 | Full-text PDF : | 156 | References: | 74 |
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