Temperature dependence of magnetophonon resistance oscillations in GaAs/AlAs heterostructures at high filling factors

The temperature dependence of the magnetic-field resistance oscillations induced by acoustic phonons in a 2D system with a moderate mobility and a high electron density in the range T = 7.4–25.4 K has been studied. It has been established that the amplitude of the magnetophonon resistance oscillations in the system under study is determined by the quantum lifetime modified by the electron-electron scattering, in accordance with the results recently obtained in a GaAs/AlGaAs heterostructure with an ultrahigh mobility and a low electron density [A. T. Hatke et al., Phys. Rev. Lett. 102, 086808 (2009)]. The shift of the main maximum of the magnetophonon resistance oscillations to higher magnetic fields with increasing temperature is observed.