L. N. Oveshnikov, V. A. Kul'bachinskii, A. B. Davydov, B. A. Aronzon, “Anomalous hall effect in a 2D heterostructure including a GaAs/InGaAs/GaAs quantum well with a remote Mn $\delta$-layer”, Pis'ma v Zh. Èksper. Teoret. Fiz., 100:9 (2014), 648–653; JETP Letters, 100:9 (2014), 570

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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2014, Volume 100, Issue 9, Pages 648–653
DOI: https://doi.org/10.7868/S0370274X14210073 (Mi jetpl4456)

This article is cited in 8 scientific papers (total in 8 papers)

CONDENSED MATTER

Anomalous hall effect in a 2D heterostructure including a GaAs/InGaAs/GaAs quantum well with a remote Mn

δ

$\delta$ -layer

L. N. Oveshnikov^a, V. A. Kul'bachinskii^ba, A. B. Davydov^c, B. A. Aronzon^ac

^a National Research Centre "Kurchatov Institute"
^b M. V. Lomonosov Moscow State University, Faculty of Physics
^c P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow

Full-text PDF (461 kB) Citations (8)

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DOI: https://doi.org/10.7868/S0370274X14210073

Abstract: For heterostructures with a GaAs/InGaAs/GaAs quantum well and a magnetic (Mn)

δ

$\delta$ -layer spatially separated from it (remote Mn д-layer), the magnetic field and temperature dependences of the anomalous component of the Hall resistivity have been analyzed. The comparison with the temperature dependence of the longitudinal electrical resistance reveals three temperature ranges where three different mechanisms of the anomalous Hall effect are manifested. The reported results can be treated as experimental evidence of the essential role of the intrinsic mechanism of the anomalous Hall effect in a two-dimensional system.

Received: 15.09.2014

English version:
Journal of Experimental and Theoretical Physics Letters, 2014, Volume 100, Issue 9, Pages 570–575
DOI: https://doi.org/10.1134/S0021364014210127

Bibliographic databases:

Document Type: Article

Language: Russian

Citation: L. N. Oveshnikov, V. A. Kul'bachinskii, A. B. Davydov, B. A. Aronzon, “Anomalous hall effect in a 2D heterostructure including a GaAs/InGaAs/GaAs quantum well with a remote Mn

δ

$\delta$ -layer”, Pis'ma v Zh. Èksper. Teoret. Fiz., 100:9 (2014), 648–653; JETP Letters, 100:9 (2014), 570–575

Citation in format AMSBIB

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Linking options:

https://www.mathnet.ru/eng/jetpl4456

https://www.mathnet.ru/eng/jetpl/v100/i9/p648

This publication is cited in the following 8 articles:

A.I. Ril', L.N. Oveshnikov, A.V. Ovcharov, S.F. Marenkin, Vacuum, 2024, 113692
Meng W., Liu W., Zhang X., Liu Y., Dai X., Liu G., Nanoscale, 13:5 (2021), 3194–3200
V. V. Rylkov, A. V. Emelyanov, S. N. Nikolaev, K. E. Nikiruy, A. V. Sitnikov, E. A. Fadeev, V. A. Demin, A. B. Granovsky, J. Exp. Theor. Phys., 131:1, SI (2020), 160–176
Oveshnikov L., Morgun L., Nekhaeva E., Kulbachinskii V., Aronzon B., Moscow International Symposium on Magnetism (Mism 2017), Epj Web of Conferences, 185, eds. Perov N., Semisalova A., E D P Sciences, 2018
D. Maryenko, A. S. Mishchenko, M. S. Bahramy, A. Ernst, J. Falson, Y. Kozuka, A. Tsukazaki, N. Nagaosa, M. Kawasaki, Nat. Commun., 8 (2017), 14777
L. N. Oveshnikov, V. A. Prudkoglyad, Yu. G. Selivanov, E. G. Chizhevskii, B. A. Aronzon, JETP Letters, 106:8 (2017), 526–533
L. N. Oveshnikov, A. B. Davydov, V. A. Kulbachinskii, B. A. Aronzon, Bull. Lebedev Phys. Inst., 44:5 (2017), 143–146
K. Yu. Chernoglazov, S. N. Nikolaev, V. V. Rylkov, A. S. Semisalova, A. V. Zenkevich, V. V. Tugushev, A. L. Vasil'ev, Yu. M. Chesnokov, E. M. Pashaev, Yu. A. Matveev, A. B. Granovskii, O. A. Novodvorskii, A. S. Vedeneev, A. S. Bugaev, O. Drachenko, S. Zhou, JETP Letters, 103:7 (2016), 476–483

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