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This article is cited in 2 scientific papers (total in 2 papers)
CONDENSED MATTER
Localization of edge electrons in a 2D topological insulator
strip
M. V. Èntinab, L. I. Magarillba a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
Abstract:
The edge states in an ideal topological insulator are
topologically protected. The same-spin edge states propagate in opposite
directions on different sides of the strip and do not mix by tunneling. The
interaction with impurities results in interedge same-spin backscattering. At
low temperatures, the localization occurs and the conductance of a long wire
vanishes. We study this localization in a numerical model of localized
scatterers. The localization length is found to be exponentially long with
respect to the strip width. The intraedge inelastic forward scattering
destroys the coherence. These processes caused by phonons were explored. The
transition temperature between kinetic and localization behaviors has been
found.
Received: 29.08.2014
Citation:
M. V. Èntin, L. I. Magarill, “Localization of edge electrons in a 2D topological insulator
strip”, Pis'ma v Zh. Èksper. Teoret. Fiz., 100:9 (2014), 644–647; JETP Letters, 100:9 (2014), 566–569
Linking options:
https://www.mathnet.ru/eng/jetpl4455 https://www.mathnet.ru/eng/jetpl/v100/i9/p644
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Statistics & downloads: |
Abstract page: | 140 | Full-text PDF : | 37 | References: | 34 | First page: | 5 |
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