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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2014, Volume 100, Issue 5, Pages 343–348
DOI: https://doi.org/10.7868/S0370274X14170044 (Mi jetpl4111) 		 
This article is cited in 3 scientific papers (total in 3 papers)

FIELDS, PARTICLES, AND NUCLEI

Superradiance of a degenerate exciton gas in semiconductors with indirect fundamental absorption edge

V. S. Krivoboka, S. N. Nikolaeva, V. S. Bagaeva, V. S. Lebedevab, E. E. Onishchenkoa

a P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
b Moscow Institute of Physics and Technology
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DOI: https://doi.org/10.7868/S0370274X14170044
Abstract: It is predicted that superradiant states can be formed in a degenerate exciton gas in a semiconductor with an indirect fundamental absorption edge. The superradiance results from four-particle recombination processes and occurs at photon energies approximately twice as high as the band gap energy. Experimental results supporting the possibility of the observation of superradiance from SiGe/Si quantum wells are presented.
Received: 23.07.2014
English version:
Journal of Experimental and Theoretical Physics Letters, 2014, Volume 100, Issue 5, Pages 306–310
DOI: https://doi.org/10.1134/S0021364014170081
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. S. Krivobok, S. N. Nikolaev, V. S. Bagaev, V. S. Lebedev, E. E. Onishchenko, “Superradiance of a degenerate exciton gas in semiconductors with indirect fundamental absorption edge”, Pis'ma v Zh. Èksper. Teoret. Fiz., 100:5 (2014), 343–348; JETP Letters, 100:5 (2014), 306–310
Citation in format AMSBIB
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    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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