Abstract:
It is predicted that superradiant states can be formed in a degenerate exciton gas in a semiconductor with an indirect fundamental absorption edge. The superradiance results from four-particle recombination processes and occurs at photon energies approximately twice as high as the band gap energy. Experimental results supporting the possibility of the observation of superradiance from SiGe/Si quantum wells are presented.
Citation:
V. S. Krivobok, S. N. Nikolaev, V. S. Bagaev, V. S. Lebedev, E. E. Onishchenko, “Superradiance of a degenerate exciton gas in semiconductors with indirect fundamental absorption edge”, Pis'ma v Zh. Èksper. Teoret. Fiz., 100:5 (2014), 343–348; JETP Letters, 100:5 (2014), 306–310