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This article is cited in 3 scientific papers (total in 3 papers)
FIELDS, PARTICLES, AND NUCLEI
Superradiance of a degenerate exciton gas in semiconductors with indirect fundamental absorption edge
V. S. Krivoboka, S. N. Nikolaeva, V. S. Bagaeva, V. S. Lebedevab, E. E. Onishchenkoa a P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
b Moscow Institute of Physics and Technology
Abstract:
It is predicted that superradiant states can be formed in a degenerate exciton gas in a semiconductor with an indirect fundamental absorption edge. The superradiance results from four-particle recombination processes and occurs at photon energies approximately twice as high as the band gap energy. Experimental results supporting the possibility of the observation of superradiance from SiGe/Si quantum wells are presented.
Received: 23.07.2014
Citation:
V. S. Krivobok, S. N. Nikolaev, V. S. Bagaev, V. S. Lebedev, E. E. Onishchenko, “Superradiance of a degenerate exciton gas in semiconductors with indirect fundamental absorption edge”, Pis'ma v Zh. Èksper. Teoret. Fiz., 100:5 (2014), 343–348; JETP Letters, 100:5 (2014), 306–310
Linking options:
https://www.mathnet.ru/eng/jetpl4111 https://www.mathnet.ru/eng/jetpl/v100/i5/p343
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Abstract page: | 209 | Full-text PDF : | 58 | References: | 40 | First page: | 14 |
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