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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2013, Volume 98, Issue 2, Pages 84–87
DOI: https://doi.org/10.7868/S0370274X1314004X (Mi jetpl3469) 		 
This article is cited in 2 scientific papers (total in 2 papers)

CONDENSED MATTER

Ab initio study of the distribution of point defects at grain boundaries in crystalline silicon

V. Yu. Lazebnykha, A. S. Mysovskyab

a Irkutsk State Technical University
b Vinogradov Institute of Geochemistry and Analytical Chemistry, Siberian Branch, Russian Academy of Sciences
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DOI: https://doi.org/10.7868/S0370274X1314004X
Abstract: The segregation of a vacancy and phosphorus on inclined grain boundaries in crystalline silicon has been calculated. It has been found that the distribution of defects at boundaries under study depends both on the nature of a defect and on the local structure of the boundary. The parameters characterizing the local deformation of the tetrahedral environment of an atom at the boundary have been proposed. A linear correlation has been found between the energy of the distribution and proposed parameters.
Received: 17.05.2013
English version:
Journal of Experimental and Theoretical Physics Letters, 2013, Volume 98, Issue 2, Pages 76–79
DOI: https://doi.org/10.1134/S0021364013150125
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. Yu. Lazebnykh, A. S. Mysovsky, “Ab initio study of the distribution of point defects at grain boundaries in crystalline silicon”, Pis'ma v Zh. Èksper. Teoret. Fiz., 98:2 (2013), 84–87; JETP Letters, 98:2 (2013), 76–79
Citation in format AMSBIB
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    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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