Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki
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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2011, Volume 94, Issue 12, Pages 939–944 (Mi jetpl2406)  
This article is cited in 2 scientific papers (total in 2 papers)

CONDENSED MATTER

Effect of the external electric field on the kinetics of recombination of photoexcited carriers in a ZnSe/BeTe type II heterostructure

E. V. Filatova, A. A. Maksimova, I. I. Tartakovskiia, D. R. Yakovlevbc, A. Waagd

a Institute of Solid State Physics, Russian Academy of Sciences
b Experimentelle Physik II, Universität Dortmund
c Ioffe Physico-Technical Institute, Russian Academy of Sciences
d Technische Universität Braunschweig, Institute of Semiconductor Technology
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Abstract: The kinetics of the radiative recombination of photoexcited electrons and holes for a spatially direct transition in a ZnSe/BeTe type II heterostructure in an external electric field has been analyzed. A strong decrease (more than two orders of magnitude) in the photoluminescence intensity, as well as a decrease in the duration of the relaxation of the direct transition, is observed when the electric field is applied. The energy levels and wavefunctions of electrons and holes in the ZnSe/BeTe heterostructure subjected to the electric field have been numerically calculated. It has been shown that the observed decrease in the photoluminescence intensity and duration of the relaxation of the direct transition is due to both an increase in the radiative recombination time and an increase in the rate of escape of photoexcited holes from the above-barrier level in the ZnSe layer to the BeTe layer.
Received: 23.11.2011
English version:
Journal of Experimental and Theoretical Physics Letters, 2011, Volume 94, Issue 12, Pages 858–862
DOI: https://doi.org/10.1134/S0021364011240040
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: E. V. Filatov, A. A. Maksimov, I. I. Tartakovskii, D. R. Yakovlev, A. Waag, “Effect of the external electric field on the kinetics of recombination of photoexcited carriers in a ZnSe/BeTe type II heterostructure”, Pis'ma v Zh. Èksper. Teoret. Fiz., 94:12 (2011), 939–944; JETP Letters, 94:12 (2011), 858–862
Citation in format AMSBIB
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\by E.~V.~Filatov, A.~A.~Maksimov, I.~I.~Tartakovskii, D.~R.~Yakovlev, A.~Waag
\paper Effect of the external electric field on the kinetics of recombination of photoexcited carriers in a ZnSe/BeTe type II heterostructure
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2011
\vol 94
\issue 12
\pages 939--944
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\jour JETP Letters
\yr 2011
\vol 94
\issue 12
\pages 858--862
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