Abstract:
The kinetics of the radiative recombination of photoexcited electrons and holes for a spatially direct transition in a ZnSe/BeTe type II heterostructure in an external electric field has been analyzed. A strong decrease (more than two orders of magnitude) in the photoluminescence intensity, as well as a decrease in the duration of the relaxation of the direct transition, is observed when the electric field is applied. The energy levels and wavefunctions of electrons and holes in the ZnSe/BeTe heterostructure subjected to the electric field have been numerically calculated. It has been shown that the observed decrease in the photoluminescence intensity and duration of the relaxation of the direct transition is due to both an increase in the radiative recombination time and an increase in the rate of escape of photoexcited holes from the above-barrier level in the ZnSe layer to the BeTe layer.
Citation:
E. V. Filatov, A. A. Maksimov, I. I. Tartakovskii, D. R. Yakovlev, A. Waag, “Effect of the external electric field on the kinetics of recombination of photoexcited carriers in a ZnSe/BeTe type II heterostructure”, Pis'ma v Zh. Èksper. Teoret. Fiz., 94:12 (2011), 939–944; JETP Letters, 94:12 (2011), 858–862
\Bibitem{FilMakTar11}
\by E.~V.~Filatov, A.~A.~Maksimov, I.~I.~Tartakovskii, D.~R.~Yakovlev, A.~Waag
\paper Effect of the external electric field on the kinetics of recombination of photoexcited carriers in a ZnSe/BeTe type II heterostructure
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2011
\vol 94
\issue 12
\pages 939--944
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\elib{https://elibrary.ru/item.asp?id=17112414}
\transl
\jour JETP Letters
\yr 2011
\vol 94
\issue 12
\pages 858--862
\crossref{https://doi.org/10.1134/S0021364011240040}
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Linking options:
https://www.mathnet.ru/eng/jetpl2406
https://www.mathnet.ru/eng/jetpl/v94/i12/p939
This publication is cited in the following 2 articles:
Riyaj M., Vijay J.P., Khan A.M., Kattayat S., Kaya S., Ahmad M.A., Kumar Sh., Alvi P.A., Rathi A., Superlattices Microstruct., 150 (2021), 106694