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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2011, Volume 94, Issue 12, Pages 934–938 (Mi jetpl2405)  
This article is cited in 4 scientific papers (total in 4 papers)

CONDENSED MATTER

Influence of electron localization on the spin dephasing anisotropy in bias GaAs/AlGaAs coupled quantum wells

A. V. Sekretenko, A. V. Larionov

Institute of Solid State Physics, Russian Academy of Sciences
Full-text PDF (312 kB) Citations (4)
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Abstract: Electron spin dephasing anisotropy is studied in GaAs/AlGaAs coupled quantum wells by means of a time-resolved Kerr rotation technique. It is found that the spin dephasing rate is strongly dependent on magnetic field and is significantly anisotropic in the quantum well plane. The presented theoretical model describes the experimental results by taking into account both the electron g-factor spreading and the irreversible electron spin relaxation which are caused by the electron localisation. The suggested theoretical description is in a good agreement with experimental data.
Received: 17.11.2011
English version:
Journal of Experimental and Theoretical Physics Letters, 2011, Volume 94, Issue 12, Pages 853–857
DOI: https://doi.org/10.1134/S0021364011240076
Bibliographic databases:
Document Type: Article
Language: English
Citation: A. V. Sekretenko, A. V. Larionov, “Influence of electron localization on the spin dephasing anisotropy in bias GaAs/AlGaAs coupled quantum wells”, Pis'ma v Zh. Èksper. Teoret. Fiz., 94:12 (2011), 934–938; JETP Letters, 94:12 (2011), 853–857
Citation in format AMSBIB
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\paper Influence of electron localization on the spin dephasing anisotropy
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\pages 934--938
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    • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Письма в Журнал экспериментальной и теоретической физики Pis'ma v Zhurnal Иksperimental'noi i Teoreticheskoi Fiziki
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